公开(公告)号：US10304664B2

公开(公告)日：2019-05-28

申请号：US15788166

申请日：2017-10-19

Applicant: Semes Co., Ltd

Inventor： Hyungchul Moon ,  Hyung Joon Kim

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/67

Abstract: Substrate treating systems are disclosed. The system may include a chamber with a processing space, a supporting unit provided in the processing space to support a substrate, a gas supplying unit provided in the processing space to supply gas into the processing space, a plasma source unit generating plasma from the gas, and a liner unit disposed to enclose the supporting unit. The supporting unit may include a supporting plate supporting a substrate. The liner unit may include an inner liner enclosing the supporting plate and an actuator vertically moving the inner liner.

公开(公告)号：US10692702B2

公开(公告)日：2020-06-23

申请号：US14663658

申请日：2015-03-20

Applicant: SEMES CO., LTD.

Inventor： Hyung Joon Kim ,  Hyungchul Moon

IPC: H01J37/32 ,  H01L21/67

Abstract: Disclosed is a substrate treating apparatus which includes a chamber, a support unit, a dielectric plate, a gas supplying unit, an antenna, and a heating unit. The chamber has a processing space therein, and an upper surface of the processing space is opened. The support unit is disposed in the chamber and supports a substrate. The dielectric plate is installed on the opened upper surface of the chamber to cover the opened upper surface. The gas supplying unit supplies a gas in the chamber. The antenna is disposed above the dielectric plate and creates plasma from the gas. The heating unit is disposed above the antenna and heats the dielectric plate.

公开(公告)号：US20150279630A1

公开(公告)日：2015-10-01

申请号：US14663658

申请日：2015-03-20

Applicant: SEMES CO., LTD.

Inventor： Hyung Joon KIM ,  Hyungchul Moon

IPC: H01J37/32 ,  H01L21/67

Abstract: Disclosed is a substrate treating apparatus which includes a chamber, a support unit, a dielectric plate, a gas supplying unit, an antenna, and a heating unit. The chamber has a processing space therein, and an upper surface of the processing space is opened. The support unit is disposed in the chamber and supports a substrate. The dielectric plate is installed on the opened upper surface of the chamber to cover the opened upper surface. The gas supplying unit supplies a gas in the chamber. The antenna is disposed above the dielectric plate and creates plasma from the gas. The heating unit is disposed above the antenna and heats the dielectric plate.

Abstract translation: 公开了一种基板处理装置，其包括室，支撑单元，电介质板，气体供给单元，天线和加热单元。 该室内具有处理空间，打开处理空间的上表面。 支撑单元设置在室中并支撑基板。 电介质板安装在敞开的室的上表面以覆盖敞开的上表面。 气体供给单元在室内供给气体。 天线设置在电介质板的上方，并从气体产生等离子体。 加热单元设置在天线上方并加热电介质板。