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    RING ASSEMBLY AND SUBSTRATE PROCESSING APPARATUS COMPRISING THE SAME
    1.
    发明申请
    RING ASSEMBLY AND SUBSTRATE PROCESSING APPARATUS COMPRISING THE SAME 有权

    公开(公告)号：US20250104978A1

    公开(公告)日：2025-03-27

    申请号：US18794502

    申请日：2024-08-05

    Applicant: SEMES CO., LTD.

    Inventor： Dong Mok LEE ,  Chun Loon CHA ,  Jong Chan PARK ,  Chae Kyun OH ,  Hyung Joon KIM

    IPC: H01J37/32

    Abstract: The ring assembly for a substrate processing apparatus, in which a plasma process is performed, of the present invention comprises an inner ring, in which a first plasma region is formed, an outer ring provided outside the inner ring, in which a second plasma region with a lower plasma distribution than the first plasma region is formed, and a cover ring provided on an upper surface of the outer ring, having a thickness smaller than that of the inner ring, and made of a material that has a lower etching reaction to plasma than the outer ring.

    SUBSTRATE TREATING APPARATUS AND INSPECTION METHOD
    2.
    发明申请
    SUBSTRATE TREATING APPARATUS AND INSPECTION METHOD 审中-公开

    公开(公告)号：US20190043699A1

    公开(公告)日：2019-02-07

    申请号：US16053417

    申请日：2018-08-02

    Applicant: SEMES CO., LTD.

    Inventor： Jae Hwan CHO ,  Hyung Joon KIM

    IPC: H01J37/32 ,  H01L21/67 ,  G01N21/41

    Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a support unit located in the process chamber to support a substrate, a gas supply unit configured to supply a process gas into the interior of the process chamber, a plasma generating unit including an upper electrode having a through-hole, through which the process gas flows, and a shower head having a hole, through which the process gas is ejected into the treatment space, and an inspection unit configured to inspect a coupling state of the shower head and the upper electrode while an optical fiber is interposed between the upper electrode and the shower head.

    SYSTEMS AND METHODS OF TREATING A SUBSTRATE
    3.
    发明申请
    SYSTEMS AND METHODS OF TREATING A SUBSTRATE 审中-公开
    处理基板的系统和方法

    公开(公告)号：US20160093473A1

    公开(公告)日：2016-03-31

    申请号：US14862748

    申请日：2015-09-23

    Applicant: Semes Co., Ltd.

    Inventor： Hyungchul MOON ,  Hyung Joon KIM

    IPC: H01J37/32

    CPC classification number: H01J37/3244 ,  H01J37/32009 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32862 ,  H01J37/32871 ,  H01L21/3065 ,  H01L21/32136 ,  H01L21/67069

    Abstract: Substrate treating systems are disclosed. The system may include a chamber with a processing space, a supporting unit provided in the processing space to support a substrate, a gas supplying unit provided in the processing space to supply gas into the processing space, a plasma source unit generating plasma from the gas, and a liner unit disposed to enclose the supporting unit. The supporting unit may include a supporting plate supporting a substrate. The liner unit may include an inner liner enclosing the supporting plate and an actuator vertically moving the inner liner.

    Abstract translation: 公开了底物处理系统。 该系统可以包括具有处理空间的室，设置在处理空间中以支撑基板的支撑单元，设置在处理空间中以将气体供应到处理空间中的气体供应单元，从气体产生等离子体的等离子体源单元 以及设置成包围支撑单元的衬垫单元。 支撑单元可以包括支撑基板的支撑板。 衬垫单元可以包括封闭支撑板的内衬和垂直移动内衬的致动器。

    APPARATUS FOR TREATING SUBSTRATE
    4.
    发明申请
    APPARATUS FOR TREATING SUBSTRATE 审中-公开
    用于处理基板的装置

    公开(公告)号：US20140090783A1

    公开(公告)日：2014-04-03

    申请号：US14039558

    申请日：2013-09-27

    Applicant: SEMES CO., LTD.

    Inventor： Hyung Joon KIM ,  Seung Pyo LEE

    IPC: H01J37/32

    Abstract: The present invention disclosed herein relates to a substrate treating apparatus, and more particularly, to an apparatus for treating a substrate using plasma. Embodiments of the present invention provide substrate treating apparatuses including a chamber having a treating space defined therein, a support member disposed in the chamber to support a substrate, a gas supply unit supplying a gas into the chamber, a plasma source generating plasma from the gas supplied into the chamber, a baffle disposed to surround the support member in the chamber and having through holes to exhaust a gas in the treating space, and a shielding unit preventing an electromagnetic field from an inside of the chamber to an outside of the chamber.

    Abstract translation: 本文公开的本发明涉及一种基板处理装置，更具体地涉及一种使用等离子体处理基板的装置。 本发明的实施例提供了一种基板处理装置，包括具有限定在其中的处理空间的室，设置在室内以支撑基板的支撑构件，向腔室供应气体的气体供给单元，从气体产生等离子体的等离子体源 供应到所述腔室中的挡板，所述挡板设置成围绕所述腔室中的所述支撑构件并具有用于排出所述处理空间中的气体的通孔，以及防止来自所述腔室的内部的电磁场到所述腔室的外部的屏蔽单元。

    ADJUSTMENT PLATE AND APPARATUS FOR TREATING SUBSTRATE HAVING THE SAME
    6.
    发明申请
    ADJUSTMENT PLATE AND APPARATUS FOR TREATING SUBSTRATE HAVING THE SAME 审中-公开
    调整板和设备，用于处理具有该基板的基板

    公开(公告)号：US20130284288A1

    公开(公告)日：2013-10-31

    申请号：US13873333

    申请日：2013-04-30

    Applicant: SEMES CO., LTD.

    Inventor： Hyung Joon KIM

    IPC: F16K15/00

    Abstract: Provided is a substrate treating apparatus using a process gas and an adjustment plate used thereof. A substrate treating apparatus including a chamber providing a space in which a process is performed, a support member supporting a substrate in the chamber, a gas supply member supplying a process gas onto the substrate disposed on the support member, and an exhaust assembly coupled to the chamber to exhaust a gas in the chamber, wherein the exhaust assembly includes an exhaust pipe connected to the chamber, an exhaust member connected to the exhaust pipe to provide a vacuum pressure in the exhaust pipe, a valve adjusting an opening rate of the exhaust pipe, and an adjustment plate having a cover plate which is provided in the chamber to interfere with a flow of the process gas in an internal region of the chamber in a direction corresponding to, when the exhaust pipe is partially opened, an opened region of the exhaust pipe. Consequently, the process gas may be uniformly supplied onto the substrate.

    Abstract translation: 提供了使用处理气体的基板处理装置及其使用的调整板。 一种基板处理装置，包括提供进行处理的空间的腔室，在腔室中支撑基板的支撑构件，将处理气体供应到设置在支撑构件上的基板上的气体供给构件以及与 所述室排出所述室中的气体，其中所述排气组件包括连接到所述室的排气管，连接到所述排气管以在所述排气管中提供真空压力的排气构件，调节所述排气口的开度的阀 管和调节板，其具有盖板，所述调整板设置在所述室中，以在所述室的内部区域中沿与所述排气管部分打开的方向相对应的方向干涉所述处理气体的流动，所述开口区域 排气管。 因此，可以将工艺气体均匀地供给到基板上。

    APPARATUS FOR TREATING SUBSTRATE
    10.
    发明申请
    APPARATUS FOR TREATING SUBSTRATE 审中-公开
    用于处理基板的装置

    公开(公告)号：US20150279630A1

    公开(公告)日：2015-10-01

    申请号：US14663658

    申请日：2015-03-20

    Applicant: SEMES CO., LTD.

    Inventor： Hyung Joon KIM ,  Hyungchul Moon

    IPC: H01J37/32 ,  H01L21/67

    Abstract: Disclosed is a substrate treating apparatus which includes a chamber, a support unit, a dielectric plate, a gas supplying unit, an antenna, and a heating unit. The chamber has a processing space therein, and an upper surface of the processing space is opened. The support unit is disposed in the chamber and supports a substrate. The dielectric plate is installed on the opened upper surface of the chamber to cover the opened upper surface. The gas supplying unit supplies a gas in the chamber. The antenna is disposed above the dielectric plate and creates plasma from the gas. The heating unit is disposed above the antenna and heats the dielectric plate.

    Abstract translation: 公开了一种基板处理装置，其包括室，支撑单元，电介质板，气体供给单元，天线和加热单元。 该室内具有处理空间，打开处理空间的上表面。 支撑单元设置在室中并支撑基板。 电介质板安装在敞开的室的上表面以覆盖敞开的上表面。 气体供给单元在室内供给气体。 天线设置在电介质板的上方，并从气体产生等离子体。 加热单元设置在天线上方并加热电介质板。

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