公开(公告)号：US20220181118A1

公开(公告)日：2022-06-09

申请号：US17540742

申请日：2021-12-02

Applicant: SEMES CO., LTD.

Inventor： Ogsen GALSTYAN ,  Shant ARAKELYAN ,  Young-Bin KIM ,  Youn Gun BONG ,  Jong-Hwan AN

IPC: H01J37/32

Abstract: Disclosed is an apparatus for treating a substrate. The apparatus may include a chamber having a space for treating the substrate therein; a support unit supporting the substrate in the chamber; a gas supply unit supplying gas into the chamber; and a plasma generation unit exciting the gas in the chamber into a plasma state, wherein the plasma generation unit may include high frequency power supply; a first antenna; a second antenna; and a matcher connected between the high frequency power supply and the first and second antennas, wherein the matcher may include a current distributor distributing a current to the first antenna and the second antenna, and the current distributor includes a first capacitor disposed between the first antenna and the second antenna; a second capacitor connected with the second antenna in series; and a third capacitor connected with the second antenna in parallel, wherein the first capacitor and the second capacitor may be provided as variable capacitors.