公开(公告)号：US20240339299A1

公开(公告)日：2024-10-10

申请号：US18607486

申请日：2024-03-17

Applicant: SEMES CO., LTD.

Inventor： Yoon Seok CHOI ,  Sun Wook JUNG ,  Youn Gun BONG

IPC: H01J37/32

CPC classification number: H01J37/3222 ,  H01J37/32229 ,  H01J37/32238 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/3255

Abstract: Proposed are a microwave antenna, and a power supplying device and a substrate processing apparatus including the same, which ensure efficient placement of components while effectively applying power to a plasma chamber. The microwave antenna includes a ring frame, and a plurality of slots provided on an inner wall of the ring frame.

公开(公告)号：US20240203704A1

公开(公告)日：2024-06-20

申请号：US18526489

申请日：2023-12-01

Applicant: SEMES CO., LTD.

Inventor： Yoon Seok CHOI ,  Yun Sang KIM ,  Han Lim KANG ,  Hyun Woo JO ,  Sang Jeong LEE ,  Youn Gun BONG

IPC: H01J37/32

CPC classification number: H01J37/32651 ,  H01J37/32522 ,  H01J37/3255 ,  H01J37/32568 ,  H01J2237/3348

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes an ion blocker dividing the inner space into a first space at a bottom side and a second space at a top side; a support unit configured to support a substrate at the first space; and a plasma source generating a plasma at the inner space, and wherein a plurality of passages are formed at the ion blocker for flowing a fluid from the second space to the first space, and the ion blocker is made of a dielectric substance, and an ion among an ion and a radical included in the plasma is captured while passing through the passage.

公开(公告)号：US20220181118A1

公开(公告)日：2022-06-09

申请号：US17540742

申请日：2021-12-02

Applicant: SEMES CO., LTD.

Inventor： Ogsen GALSTYAN ,  Shant ARAKELYAN ,  Young-Bin KIM ,  Youn Gun BONG ,  Jong-Hwan AN

IPC: H01J37/32

Abstract: Disclosed is an apparatus for treating a substrate. The apparatus may include a chamber having a space for treating the substrate therein; a support unit supporting the substrate in the chamber; a gas supply unit supplying gas into the chamber; and a plasma generation unit exciting the gas in the chamber into a plasma state, wherein the plasma generation unit may include high frequency power supply; a first antenna; a second antenna; and a matcher connected between the high frequency power supply and the first and second antennas, wherein the matcher may include a current distributor distributing a current to the first antenna and the second antenna, and the current distributor includes a first capacitor disposed between the first antenna and the second antenna; a second capacitor connected with the second antenna in series; and a third capacitor connected with the second antenna in parallel, wherein the first capacitor and the second capacitor may be provided as variable capacitors.