SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20240399429A1

    公开(公告)日:2024-12-05

    申请号:US18442486

    申请日:2024-02-15

    Abstract: Provided is a substrate processing apparatus and a substrate processing method that are capable of increasing exhaust volume without increasing exhaust facilities. An apparatus for processing a substrate includes: a processing chamber having a processing space for processing a substrate; a support unit for supporting the substrate in the processing space; a liquid supply unit for supplying a liquid to a substrate supported by the support unit; and an exhaust unit for exhausting the processing space, in which the exhaust unit includes: an exhaust pipe connected to the processing space; and an exhaust amplifier installed in the exhaust pipe and for supplying acceleration gas to a passage of the exhaust pipe to amplify an exhaust flow rate of exhaust gas flowing in the exhaust pipe.

    SUBSTRATE PROCESSING APPARATUS
    2.
    发明公开

    公开(公告)号:US20240207906A1

    公开(公告)日:2024-06-27

    申请号:US18475488

    申请日:2023-09-27

    CPC classification number: B08B3/08 H01L21/67023

    Abstract: A substrate processing apparatus includes a support unit supporting a substrate, a rear nozzle unit installation unit including a sidewall surrounding the support unit and forming an internal space, a rear nozzle unit including a rear nozzle movably disposed outside of the sidewall to supply liquid toward a rear surface of the substrate and a rear nozzle driving unit connected to the rear nozzle through a partial sidewall portion of the sidewall in the internal space and driving the rear nozzle to move, and a liquid inflow preventing unit disposed on the partial sidewall portion of the sidewall and including an isolation space isolated from the internal space.

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