公开(公告)号：US10563919B2

公开(公告)日：2020-02-18

申请号：US15463319

申请日：2017-03-20

Applicant: SEMES CO., LTD.

Inventor： Jung Min Won ,  Ik-Jin Choi ,  Hyo Seong Seong ,  Shin-Woo Nam

IPC: F27D7/06

Abstract: An embodiment includes an apparatus for controlling temperature of a substrate, an apparatus for treating a substrate comprising the same, and a method of controlling the same, which may control the temperature of the substrate by each area and not increasing the volume of the apparatus. The substrate temperature control apparatus comprises: a support plate for supporting a substrate; a plurality of heating units placed in different area of the substrate and controlling a temperature of the substrate by each area; a power supply unit for providing a power to control the temperature of the substrate; a switch unit connected between the plurality of heating units and the power supply unit, and obtaining one or more of a transistor device; and a controller for controlling a power which is supplied to each heating units by controlling unit.

公开(公告)号：US11456154B2

公开(公告)日：2022-09-27

申请号：US14685107

申请日：2015-04-13

Applicant: Semes Co., Ltd.

Inventor： Seung-Jin Park ,  Hyoseong Seong ,  Jung Min Won ,  Doo ho Lim

IPC: H01J37/32 ,  C23C16/505

Abstract: Provided is a substrate treatment apparatus including a process chamber, a supporting unit, a gas supplying unit, and a plasma generating unit. The plasma generating unit may include a power, a primary antenna connected to the power through a first line, a secondary antenna connected to the power through a second line diverging from the first line at a first junction, the primary and secondary antennas being connected in parallel to the power, a third reactance device connected to the power through a third line diverging from the second line at a second junction, the secondary antenna and the third reactance device being connected in parallel to the power, and a variable reactance installed on the second line between the second junction and the secondary antenna.