WAFER HEATING APPARATUS AND WAFER PROCESSING APPARATUS USING THE SAME

    公开(公告)号:US20240096663A1

    公开(公告)日:2024-03-21

    申请号:US18126933

    申请日:2023-03-27

    申请人: SEMES CO., LTD.

    IPC分类号: H01L21/67

    CPC分类号: H01L21/67115 H01L21/6708

    摘要: Proposed are a wafer heating apparatus and a wafer processing apparatus using the same. More particularly, proposed are a wafer heating apparatus having an improved structure to enable efficient cooling of a terminal block, and a wafer processing apparatus using the same. A wafer heating apparatus for heating a wafer according to one embodiment includes a heater disposed below the wafer and configured to serve as a heat source, a cooling plate disposed below the heater and configured to provide cool air, and a terminal block configured to supply power to the heater and having a lower end portion in contact with the cooling plate.

    APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING SUBSTRATE

    公开(公告)号:US20220208560A1

    公开(公告)日:2022-06-30

    申请号:US17565331

    申请日:2021-12-29

    申请人: SEMES CO., LTD.

    IPC分类号: H01L21/67

    摘要: Provided is an apparatus for treating a substrate. In the exemplary embodiment, the apparatus for treating the substrate includes a support member configured to support a substrate and provided rotatably; a treating liquid nozzle configured to supply selectively a high-temperature first treating liquid and a high-temperature second treating liquid onto the substrate; and a controller configured to control the treating liquid nozzle so that the treating liquid nozzle first supplies the first treating liquid onto the substrate and then supplies the second treating liquid onto the substrate.