公开(公告)号：US20240096663A1

公开(公告)日：2024-03-21

申请号：US18126933

申请日：2023-03-27

申请人： SEMES CO., LTD.

发明人： Soo Han SONG ,  Jung Bong CHOI ,  Kang Seop YUN ,  Young Il LEE ,  Min Ok KANG

IPC分类号： H01L21/67

CPC分类号： H01L21/67115 ,  H01L21/6708

摘要： Proposed are a wafer heating apparatus and a wafer processing apparatus using the same. More particularly, proposed are a wafer heating apparatus having an improved structure to enable efficient cooling of a terminal block, and a wafer processing apparatus using the same. A wafer heating apparatus for heating a wafer according to one embodiment includes a heater disposed below the wafer and configured to serve as a heat source, a cooling plate disposed below the heater and configured to provide cool air, and a terminal block configured to supply power to the heater and having a lower end portion in contact with the cooling plate.

公开(公告)号：US20220319905A1

公开(公告)日：2022-10-06

申请号：US17704194

申请日：2022-03-25

申请人： SEMES CO., LTD.

发明人： Soo Han SONG ,  Chul Goo KIM ,  Jung Bong CHOI ,  Kang Seop YUN

IPC分类号： H01L21/687 ,  H01L21/67

摘要： Disclosed is a support unit. The support unit that supports a substrate may include a chuck stage that is rotatable, a heating member disposed above the chuck stage and that heats the substrate supported by the support unit, a power source that applies electric power to the heating member, a window disposed above the chuck stage and defining an interior space, in which the heating member is disposed, and an interlock module that selectively cuts off the electric power applied to the heating member.

公开(公告)号：US20240047236A1

公开(公告)日：2024-02-08

申请号：US18138037

申请日：2023-04-22

申请人： SEMES CO., LTD.

发明人： Soo Han SONG ,  Jung Bong Choi ,  Kang Seop Yun

IPC分类号： H01L21/67 ,  H01L21/02

CPC分类号： H01L21/67051 ,  H01L21/02052 ,  H01L21/6715

摘要： The present disclosure provides an apparatus for treating a substrate, comprising: a chemical discharge pipe; a cover configured to surround the chemical discharge pipe; a buffer disposed in a space between the chemical discharge pipe and the cover; a chemical supplier configured to supply a chemical to the chemical discharge pipe; a cleaning liquid supplier configured to supply a cleaning liquid via the cover; and a dry gas supplier configured to supply a dry gas via the cover, wherein the supplied cleaning liquid is sprayed by passing through the buffer via a space between the outside of the chemical discharge pipe and the inside of the cover to clean a tip of the chemical discharge pipe, and the supplied dry gas is sprayed by passing through the buffer via the space between the outside of the chemical discharge pipe and the inside of the cover to dry the tip of the chemical discharge pipe.