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公开(公告)号：US20230207272A1
公开(公告)日：2023-06-29
申请号：US18056046
申请日：2022-11-16
Inventor： Sang Jeong LEE , Yoon Seok CHOI , Sun Wook JUNG , Ho-Jun LEE , Sang Woo KIM
IPC: H01J37/32
CPC classification number: H01J37/32201 , H01J37/3244 , H01J37/32229
Abstract: An exemplary embodiment of the present invention provided an apparatus for treating a substrate. The apparatus for treating the substrate includes a process chamber having a treating space therein, a support unit for supporting the substrate in the treating space, gas supply unit for supplying treating gas to the treating space, and a microwave application unit for applying microwaves to the treating gas to generate plasma, wherein the microwave application unit includes a transmission plate disposed above the support unit to radiate the microwaves to the treating space, a first waveguide disposed above the transmission plate, and a first power supply for applying the microwaves to the first waveguide, wherein the first waveguide is provided in a ring shape.
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公开(公告)号：US20250140531A1
公开(公告)日：2025-05-01
申请号：US18826134
申请日：2024-09-05
Applicant: SEMES CO., LTD.
Inventor： Sang Woo KIM , Jae Kyung LEE , Ju Yong JANG
IPC: H01J37/32
Abstract: Disclosed is a substrate processing apparatus including a substrate support unit. The substrate support unit supports a substrate, has at least one pin hole formed vertically therethrough, and accommodates a lift pin therein so as to allow the lift pin to ascend and descend through the pin hole. The substrate support unit includes a ceramic puck on which the substrate is seated, a base plate configured to support the ceramic puck, an adhesive layer for coupling between the ceramic puck and the base plate, and a bush provided around the pin hole. The bush includes a first bush having a tube shape and a second bush coupled to an outer peripheral surface of the first bush, and the first bush includes a protruding portion formed on an upper surface thereof.
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