公开(公告)号：US20250149389A1

公开(公告)日：2025-05-08

申请号：US18787320

申请日：2024-07-29

Applicant: SEMES CO., LTD.

Inventor： Il Young KIM ,  Seong Kwang LEE ,  Hahn Joo YOON ,  Yong Hoon SUNG ,  Sang Man PARK ,  Tae Wan KIM ,  Jun Ho SEO

IPC: H01L21/66 ,  H01J37/32 ,  H01L21/67

Abstract: Disclosed are a substrate processing method and a substrate processing apparatus. The substrate processing method of etching a thin film formed on a substrate in units of atomic layers includes a modifying step of supplying a modifying gas to a processing space in a chamber accommodating the substrate to modify a surface of the thin film and form a modified film having a first thickness, a surface adsorption step of supplying a precursor to the processing space to adsorb the precursor to the modified surface of the thin film, and an etching step of supplying heat to the substrate adsorbed with the precursor to etch the modified surface of the thin film adsorbed with the precursor. The surface adsorption step and the etching step are repeatedly performed multiple times until the modified film having the first thickness is etched.