公开(公告)号：US20250149389A1

公开(公告)日：2025-05-08

申请号：US18787320

申请日：2024-07-29

Applicant: SEMES CO., LTD.

Inventor： Il Young KIM ,  Seong Kwang LEE ,  Hahn Joo YOON ,  Yong Hoon SUNG ,  Sang Man PARK ,  Tae Wan KIM ,  Jun Ho SEO

IPC: H01L21/66 ,  H01J37/32 ,  H01L21/67

Abstract: Disclosed are a substrate processing method and a substrate processing apparatus. The substrate processing method of etching a thin film formed on a substrate in units of atomic layers includes a modifying step of supplying a modifying gas to a processing space in a chamber accommodating the substrate to modify a surface of the thin film and form a modified film having a first thickness, a surface adsorption step of supplying a precursor to the processing space to adsorb the precursor to the modified surface of the thin film, and an etching step of supplying heat to the substrate adsorbed with the precursor to etch the modified surface of the thin film adsorbed with the precursor. The surface adsorption step and the etching step are repeatedly performed multiple times until the modified film having the first thickness is etched.

公开(公告)号：US20240219837A1

公开(公告)日：2024-07-04

申请号：US18396996

申请日：2023-12-27

Applicant: Semes Co., Ltd

Inventor： Ki Won HAN ,  Jun Ho SEO

IPC: G03F7/16

CPC classification number: G03F7/16

Abstract: Provided is a substrate processing apparatus which effectively exhausts organic gas, such as ammonia, generated in the process of processing a substrate by using gas. The substrate processing apparatus includes: a housing provided with a processing space in which a substrate is processed therein; a hand which transfers the substrate to the processing space; a guide located at a side portion of the housing, and which guides a vertical movement of the hand; and an exhaust duct located adjacent to the housing and the guide, and which provides an exhaust path of the processing space, and an exhaust path of an interior space of the guide.

公开(公告)号：US20220205090A1

公开(公告)日：2022-06-30

申请号：US17564285

申请日：2021-12-29

Applicant: SEMES CO., LTD.

Inventor： Ju Won KIM ,  Yang Yeol RYU ,  Hee Man AHN ,  Jun Ho SEO ,  Dong Woon PARK ,  Sang Pil YOON

IPC: C23C16/44 ,  H01L21/687 ,  H01L21/67

Abstract: An apparatus for processing a substrate includes a first processing unit configured to have a first processing container having a first inner space and a first support unit supporting and rotating the substrate in the first inner space; a second processing unit configured to have a second processing container having a second inner space and a second support unit supporting and rotating the substrate in the second inner space; an exhaust unit configured to exhaust the first and the second inner space; a first exhaust pipe configured to have a first exhaust port for introducing atmosphere of the first inner space and exhaust the atmosphere introduced through the first exhaust port to the integrated duct; and a second exhaust pipe configured to have a second exhaust port for introducing atmosphere of the second inner space and exhaust the atmosphere introduced through the second exhaust port to the integrated duct.

公开(公告)号：US20220197145A1

公开(公告)日：2022-06-23

申请号：US17557230

申请日：2021-12-21

Applicant: SEMES CO., LTD.

Inventor： Ju Won KIM ,  Jun Ho SEO ,  Dong Woon PARK ,  Sang Pil YOON

IPC: G03F7/16

Abstract: An apparatus for treating a substrate, the apparatus comprising: a treating container having an inner space; a support unit supporting and rotating the substrate in the inner space; and an exhaust unit exhausting an air flow in the inner space, wherein the treating container includes an outer cup providing the inner space; and an inner cup disposed at the inner space and spaced apart from the outer cup, and wherein the outer cup has a protrusion at a side wall thereof.