公开(公告)号：US11587770B2

公开(公告)日：2023-02-21

申请号：US16913467

申请日：2020-06-26

Applicant: SEMES CO., LTD.

Inventor： Jamyung Gu ,  Jong-Hwan An ,  Goon Ho Park ,  Taehoon Jo ,  Shant Arakelyan

IPC: H01J37/32

Abstract: A substrate treating apparatus includes a chamber having a process space therein, a substrate support unit that supports a substrate in the process space, a gas supply unit that supplies gas into the process space, and a plasma generation unit that generates plasma from the gas, wherein the substrate support unit includes a substrate support part that supports the substrate, a focus ring that surrounds the substrate support part, an insulator located below the focus ring and having a groove formed therein, an electrode provided in the groove formed in the insulator, and an impedance controller that is connected with the electrode and that adjusts impedance of the electrode, and the impedance controller includes a resonance control circuit that adjusts a maximum value of current applied to the electrode and an impedance control circuit that controls an incidence angle of plasma ions in an edge region of the substrate.