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公开(公告)号：US20220199368A1
公开(公告)日：2022-06-23
申请号：US17545130
申请日：2021-12-08
Applicant: SEMES CO., LTD.
Inventor： Hyoungkyu Son , Jong-Hwan An , Jae Hyun Cho , Min Keun Bae , Ogsen Galstyan , Dong Suk Kim , Hyeon Gyu Kim , Won Seok Lee , Sung Je Kim
IPC: H01J37/32
Abstract: Provided is a support unit included in an apparatus for treating a substrate using plasma and configured to support the substrate. The support unit may include a power supply rod connected to a high-frequency power supply; an electrode plate configured to receive power from the power supply rod; and a ground ring provided to surround the electrode plate when viewed from the top and including a ground ring to be grounded.
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Patent Agency Ranking
公开(公告)号：US11823874B2
公开(公告)日：2023-11-21
申请号：US17323250
申请日：2021-05-18
Applicant: SEMES CO., LTD.
Inventor： Ogsen Galstyan , Junpyo Lee , Goon Ho Park , Hyun-Jin Kim , Young-Bin Kim , Jong-Hwan An
IPC: H01J37/32
CPC classification number: H01J37/32724 , H01J37/3244 , H01J37/3266 , H01J37/32174
Abstract: Disclosed is a substrate treating apparatus, which includes a chamber having a space for treating a substrate in an interior thereof, a substrate support assembly including a support plate situated in the chamber and which supports the substrate, a gas supply unit which supplies a gas into the interior of the chamber, a plasma generating unit which excites the gas in in the interior of the chamber into a plasma state, and a substrate temperature control unit which controls a temperature of the substrate, and the substrate temperature control unit includes a plurality of heaters installed in different areas of the support plate, a power supply part which supplies electric power to the plurality of heaters, a ferrite core which interrupts a low-frequency signal introduced to the power supply part, and a plurality of air cores which interrupts a high-frequency signal introduced into the power supply part.
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公开(公告)号：US20200051784A1
公开(公告)日：2020-02-13
申请号：US16530468
申请日：2019-08-02
Applicant: SEMES CO., LTD.
Inventor： Ogsen GALSTYAN , Young-Bin Kim , Jamyung GU , Jong-Hwan An
Abstract: A substrate treating apparatus includes a chamber having a space therein in which a substrate is treated, a support unit that supports the substrate in the chamber, a gas supply unit that supplies gas into the chamber, and a plasma generation unit that excites the gas in the chamber into a plasma state. The plasma generation unit includes a high-frequency power supply, a first antenna connected to one end of the high-frequency power supply, a second antenna connected with the first antenna in parallel, and a current divider that distributes electric current to the first antenna and the second antenna. The current divider includes a first capacitor disposed between the first antenna and the second antenna, a second capacitor connected with the second antenna in parallel, and a third capacitor connected with the second antenna in series. The second capacitor and the third capacitor are implemented with a variable capacitor.
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公开(公告)号：US12249491B2
公开(公告)日：2025-03-11
申请号：US17395860
申请日：2021-08-06
Applicant: SEMES CO., LTD.
Inventor： Hyoungkyu Son , Jong-Hwan An , Jae Hyun Cho , Min Keun Bae , Dong Suk Kim , Hyeon Gyu Kim , Ogsen Galstyan , Won Seok Lee , Sung Je Kim
IPC: H01J37/32 , H01L21/3065
Abstract: The inventive concept relates to a substrate support unit provided in an apparatus for treating a substrate using plasma. In an embodiment, the substrate support unit includes a dielectric plate on which the substrate is placed, a lower electrode that is disposed under the dielectric plate and that has a first diameter, a power supply rod that applies RF power to the lower electrode and has a second diameter, and a ground member disposed under the lower electrode and spaced apart from the lower electrode by a first gap by an insulating member, the ground member including a plate portion having a through-hole formed therein through which the power supply rod passes, in which the through-hole has a third diameter.
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公开(公告)号：US11587770B2
公开(公告)日：2023-02-21
申请号：US16913467
申请日：2020-06-26
Applicant: SEMES CO., LTD.
Inventor： Jamyung Gu , Jong-Hwan An , Goon Ho Park , Taehoon Jo , Shant Arakelyan
IPC: H01J37/32
Abstract: A substrate treating apparatus includes a chamber having a process space therein, a substrate support unit that supports a substrate in the process space, a gas supply unit that supplies gas into the process space, and a plasma generation unit that generates plasma from the gas, wherein the substrate support unit includes a substrate support part that supports the substrate, a focus ring that surrounds the substrate support part, an insulator located below the focus ring and having a groove formed therein, an electrode provided in the groove formed in the insulator, and an impedance controller that is connected with the electrode and that adjusts impedance of the electrode, and the impedance controller includes a resonance control circuit that adjusts a maximum value of current applied to the electrode and an impedance control circuit that controls an incidence angle of plasma ions in an edge region of the substrate.
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公开(公告)号：US10600618B2
公开(公告)日：2020-03-24
申请号：US16530468
申请日：2019-08-02
Applicant: SEMES CO., LTD.
Inventor： Ogsen Galstyan , Young-Bin Kim , Jamyung Gu , Jong-Hwan An
Abstract: A substrate treating apparatus includes a chamber having a space therein in which a substrate is treated, a support unit that supports the substrate in the chamber, a gas supply unit that supplies gas into the chamber, and a plasma generation unit that excites the gas in the chamber into a plasma state. The plasma generation unit includes a high-frequency power supply, a first antenna connected to one end of the high-frequency power supply, a second antenna connected with the first antenna in parallel, and a current divider that distributes electric current to the first antenna and the second antenna. The current divider includes a first capacitor disposed between the first antenna and the second antenna, a second capacitor connected with the second antenna in parallel, and a third capacitor connected with the second antenna in series. The second capacitor and the third capacitor are implemented with a variable capacitor.
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