公开(公告)号：US20220415626A1

公开(公告)日：2022-12-29

申请号：US17846104

申请日：2022-06-22

Applicant: SEMES CO., LTD.

Inventor： JIN HEE HONG ,  SUNG MIN CHOI ,  YUN SANG KIM ,  MIN SUNG JEON ,  YOUNG EUN JEON ,  DONG YOUNG JANG

IPC: H01J37/32 ,  H01L21/67

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing a treating space; a support unit supporting a substrate at the treating space; a gas supply unit configured to introduce a gas to the treating space; a plasma source configured to provide an energy for exciting a gas introduced to the treating space to a plasma; an exhaust unit configured to exhaust an atmosphere within the treating space to an outside of the treating space; and a heating source positioned above the support unit, and wherein the heating source applies a heating energy in a pulse form to the substrate.