APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING SUBSTRATE

    公开(公告)号:US20220415626A1

    公开(公告)日:2022-12-29

    申请号:US17846104

    申请日:2022-06-22

    Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing a treating space; a support unit supporting a substrate at the treating space; a gas supply unit configured to introduce a gas to the treating space; a plasma source configured to provide an energy for exciting a gas introduced to the treating space to a plasma; an exhaust unit configured to exhaust an atmosphere within the treating space to an outside of the treating space; and a heating source positioned above the support unit, and wherein the heating source applies a heating energy in a pulse form to the substrate.

    SUBSTRATE TREATING APPARATUS
    2.
    发明公开

    公开(公告)号:US20230343563A1

    公开(公告)日:2023-10-26

    申请号:US17725000

    申请日:2022-04-20

    Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit disposed within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space; and wherein the plasma generation unit comprises: a bottom electrode member; and a top electrode member opposite to the bottom electrode member, wherein the top electrode member comprises: an electrode plate including an electrode; a first plate made of a different material from the electrode plate; and a second plate, and wherein the second plate, the electrode plate, and the first plate are stacked on one another.

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