公开(公告)号：US20200026258A1

公开(公告)日：2020-01-23

申请号：US16518059

申请日：2019-07-22

Applicant: Semes Co., Ltd

Inventor： Tae Woong SEO ,  Taerim LEE ,  Youngje UM

IPC: G05B19/4065 ,  H01L21/67

Abstract: A substrate treating apparatus includes a process module including a plurality of process units that perform a plurality of steps included in a substrate treating process and that perform the substrate treating process on substrates sequentially placed in the process units based on process recipes for the substrates, a scheduler that controls operations of the process module and the process units included in the process module, a storage that stores transfer paths information of the substrates, and a selection module that selects a process unit to proceed, by a result of feeding back the transfer paths information stored in the storage to the scheduler. The substrate treating apparatus may further include a measuring instrument that measures defect values of the transfer paths information along which the substrates are transferred. The storage may store the defect values measured by the measuring instrument according to the transfer paths information of the substrates.

公开(公告)号：US20230044888A1

公开(公告)日：2023-02-09

申请号：US17965911

申请日：2022-10-14

Applicant: SEMES CO., LTD.

Inventor： Yong-Jun SEO ,  Hyun YOON ,  Jungsuk GOH ,  Byeong Geun KIM ,  Yoonki SA ,  Doyeon KIM ,  Yerim YEON ,  Choonghyun LEE ,  Pil Kyun HEO ,  Youngje UM ,  Jaeseong LEE ,  Dongok AHN

IPC: H01L21/02 ,  H01L21/67

Abstract: The inventive concept provides a method for treating a substrate. In an embodiment, the substrate treating method includes a treatment step of treating a residue on the substrate with a first fluid in a supercritical state and a second fluid in a supercritical state in a process space of a chamber, and the first fluid in the supercritical state and the second fluid in the supercritical state have different densities.

公开(公告)号：US20210050210A1

公开(公告)日：2021-02-18

申请号：US16993442

申请日：2020-08-14

Applicant: SEMES CO., LTD.

Inventor： Yong-Jun SEO ,  Hyun YOON ,  Jungsuk GOH ,  Byeong Geun KIM ,  Yoonki SA ,  Doyeon KIM ,  Yerim YEON ,  Choonghyun LEE ,  Pil Kyun HEO ,  Youngje UM ,  Jaeseong LEE ,  Dongok AHN

IPC: H01L21/02 ,  H01L21/67

Abstract: The inventive concept provides a method for treating a substrate. In an embodiment, the substrate treating method includes a treatment step of treating a residue on the substrate with a first fluid in a supercritical state and a second fluid in a supercritical state in a process space of a chamber, and the first fluid in the supercritical state and the second fluid in the supercritical state have different densities.