公开(公告)号：US20190067164A1

公开(公告)日：2019-02-28

申请号：US15813710

申请日：2017-11-15

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Takashi NOMA ,  Hideyuki INOTSUME ,  Kazuo OKADA

IPC: H01L23/48 ,  H01L23/528 ,  H01L23/532 ,  H01L23/00 ,  H01L21/304 ,  H01L21/768 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/288 ,  H01L21/683 ,  H01L21/78

Abstract: In one general aspect, an integrated passive device (IPD) die includes at least one passive component that is embedded in an insulator material disposed on a front surface of a substrate. The IPD die includes a through-substrate via (TSV) extending from the backside of the substrate toward the front surface of the substrate. The TSV defines interconnect access to at least one passive component embedded in the insulator material disposed on the front surface of the substrate. The substrate has a thickness less than three-quarters of an original thickness of the substrate.