公开(公告)号：US10418472B2

公开(公告)日：2019-09-17

申请号：US15581170

申请日：2017-04-28

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter Moens ,  Jia Guo ,  Ali Salih ,  Chun-Li Liu

IPC: H01L29/778 ,  H01L29/66 ,  H01L21/02 ,  H01L29/417 ,  H01L29/20 ,  H01L29/10 ,  H01L29/205 ,  H01L29/40

Abstract: An electronic device can include a HEMT including at least two channel layers. In an embodiment, a lower semiconductor layer overlies a lower channel layer, wherein the lower semiconductor layer has an aluminum content that is at least 10% of a total metal content of the lower semiconductor layer. An upper semiconductor layer overlies the upper channel layer, wherein the upper semiconductor layer has an aluminum content that is greater as compared to the lower semiconductor layer. In another embodiment, an electronic device can include stepped source and drain electrodes, so that lower contact resistance can be achieved. In a further embodiment, an absolute value of a difference between pinch-off or threshold voltages between different channel layers is greater than 1 V and allows current to be turned on or turned off for a channel layer without affecting another channel layer.

公开(公告)号：US09741840B1

公开(公告)日：2017-08-22

申请号：US15270905

申请日：2016-09-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter Moens ,  Jia Guo

IPC: H01L21/00 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/10 ,  H01L29/40 ,  H01L27/06 ,  H01L29/66 ,  H01L21/8252

CPC classification number: H01L29/7783 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/1029 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/404 ,  H01L29/408 ,  H01L29/417 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/66462

Abstract: An electronic device can include a lower channel layer, an upper channel layer overlying the lower channel layer and having an opening extending through the upper channel layer. The electronic device can further include an insulator within the opening; and a gate electrode extending into the opening, wherein the insulator is disposed between the gate electrode and the second channel layer. A double channel transistor can include the lower and upper channel layers and the gate electrode. In a further embodiment, a conductive member can be used to electrically short the channel layers near the gate electrode. In an embodiment, the transistor can be enhancement-mode transistor. A process can include forming the insulator such that it is in the form of a sidewall spacer or as an insulating layer along the sidewall and bottom of the opening through the upper channel layer.

公开(公告)号：US09673311B1

公开(公告)日：2017-06-06

申请号：US15182405

申请日：2016-06-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter Moens ,  Jia Guo ,  Ali Salih ,  Chun-Li Liu

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/20 ,  H01L29/778 ,  H01L29/205 ,  H01L21/02

CPC classification number: H01L29/7783 ,  H01L21/0254 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/404 ,  H01L29/41766 ,  H01L29/66431 ,  H01L29/66446 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7782 ,  H01L29/7787 ,  H01L2924/13064

Abstract: An electronic device can include a HEMT including at least two channel layers. In an embodiment, a lower semiconductor layer overlies a lower channel layer, wherein the lower semiconductor layer has an aluminum content that is at least 10% of a total metal content of the lower semiconductor layer. An upper semiconductor layer overlies the upper channel layer, wherein the upper semiconductor layer has an aluminum content that is greater as compared to the lower semiconductor layer. In another embodiment, an electronic device can include stepped source and drain electrodes, so that lower contact resistance can be achieved. In a further embodiment, an absolute value of a difference between pinch-off or threshold voltages between different channel layers is greater than 1 V and allows current to be turned on or turned off for a channel layer without affecting another channel layer.