公开(公告)号：US11721736B2

公开(公告)日：2023-08-08

申请号：US17172243

申请日：2021-02-10

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Aurore Constant ,  Joris Baele

IPC分类号： H01L29/423 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L29/42376 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/7783

摘要： An electronic device can include a gate structure. In an embodiment, the gate structure can include a gate electrode including a doped semiconductor material, a metal-containing member, a pair of conductive sidewall spacers. The first metal-containing member can overlie the gate electrode. The conductive sidewall spacers can overlie the gate electrode and along opposite sides of the first metal-containing member. In another embodiment, the gate structure can include a gate electrode, a first metal-containing member overlying the gate electrode, and a second metal-containing member overlying the first metal-containing member. The first metal-containing member can have a length that is greater than the length of the second metal-containing member and substantially the same length as the gate electrode.

公开(公告)号：US12068406B2

公开(公告)日：2024-08-20

申请号：US17248989

申请日：2021-02-16

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Peter Coppens ,  Peter Moens ,  Joris Baele

IPC分类号： H01L29/778 ,  H01L29/10 ,  H01L29/40 ,  H01L29/66 ,  H01L29/20

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/402 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/2003

摘要： A High Electron Mobility Transistor (HEMT) includes a source, a drain, a channel layer extending between the source and the drain, a barrier layer formed in contact with the channel layer, and extending between the source and the drain, and a gate formed in contact with, and covering at least a portion of, the barrier layer. The gate has gate edge portions and a gate central portion, and dielectric spacers may be formed over the gate edge portions, with the dielectric spacers having a first width therebetween proximal to the gate, and a second width therebetween distal from the gate, where the second width is longer than the first width.

公开(公告)号：US10741494B2

公开(公告)日：2020-08-11

申请号：US16183078

申请日：2018-11-07

申请人： Semiconductor Components Industries, LLC

发明人： Aurore Constant ,  Peter Coppens ,  Joris Baele

IPC分类号： H01L23/532 ,  H01L21/786 ,  H01L21/04 ,  H01L21/02 ,  H01L29/45 ,  H01L21/285 ,  H01L21/768

摘要： An electronic device can include a semiconductor layer and a contact structure forming an ohmic contact with the layer. In an embodiment, the semiconductor layer can include a III-N material, and the contact structure includes a first phase and a second phase, wherein the first phase includes Al, the second phase includes a metal, and the first phase contacts the semiconductor layer. In another embodiment, the semiconductor layer can be a monocrystalline layer having a surface along a crystal plane. The contact structure can include a polycrystalline material including crystals having surfaces that contact the surface of the monocrystalline layer, wherein a lattice mismatch between the surface of the monocrystalline layer and the surfaces of the crystals is at most 20%.

公开(公告)号：US09768247B1

公开(公告)日：2017-09-19

申请号：US15148170

申请日：2016-05-06

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Samir Mouhoubi ,  Joris Baele

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L29/40 ,  H01L29/10 ,  H01L29/66

CPC分类号： H01L29/0634 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813

摘要： A semiconductor device includes a charge-compensating region with a first structure disposed adjoining an end portion of the charge-compensating region. The first structure is configured to reduce charge-imbalances present in the charge-compensating region. In one embodiment, the first structure includes a trench that extends along the vertical depth of the charge-compensated trench so that the final charge-compensating region is provided without corner portions. In one embodiment, a material, such as a dielectric material and/or a polycrystalline semiconductor material, may be disposed within the trench and at least along the end portion of the charge-compensating region. Among other things, the first structure improves device electrical performance and manufacturing yields.