公开(公告)号：US20190334021A1

公开(公告)日：2019-10-31

申请号：US16510601

申请日：2019-07-12

申请人： Semiconductor Components Industries, LLC

发明人： Peter Coppens ,  Aurore Constant

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/10 ,  H01L29/423

摘要： An electronic device can include a first layer including a III-V material, and a conductive layer including a first film that contacts the first layer, wherein the first film includes Ta—Si compound. In an embodiment, the electronic device can be a high electron mobility transistor (HEMT), the first layer can be a barrier layer between a channel layer and the source and drain electrodes. The source and drain electrodes are formed from the conductive layer. In a particular embodiment, the barrier layer can include AlGaN and be undoped or unintentional doped, and a Ta—Si compound can be the first film that contacts AlGaN within the barrier layer. The Ta—Si compound allows for relatively low contact resistance to be achieved without a relatively high temperature anneal or unusual sensitivity to the thickness of the first film that contains the Ta—Si compound.

公开(公告)号：US12068406B2

公开(公告)日：2024-08-20

申请号：US17248989

申请日：2021-02-16

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Peter Coppens ,  Peter Moens ,  Joris Baele

IPC分类号： H01L29/778 ,  H01L29/10 ,  H01L29/40 ,  H01L29/66 ,  H01L29/20

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/402 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/2003

摘要： A High Electron Mobility Transistor (HEMT) includes a source, a drain, a channel layer extending between the source and the drain, a barrier layer formed in contact with the channel layer, and extending between the source and the drain, and a gate formed in contact with, and covering at least a portion of, the barrier layer. The gate has gate edge portions and a gate central portion, and dielectric spacers may be formed over the gate edge portions, with the dielectric spacers having a first width therebetween proximal to the gate, and a second width therebetween distal from the gate, where the second width is longer than the first width.

公开(公告)号：US10790374B2

公开(公告)日：2020-09-29

申请号：US16017145

申请日：2018-06-25

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Aurore Constant ,  Peter Coppens

IPC分类号： H01L29/00 ,  H01L29/45 ,  H01L23/29 ,  H01L21/18 ,  H01L21/285 ,  H01L23/31 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

摘要： Implementations of an ohmic contact for a gallium nitride (GaN) device may include: a first layer including aluminum coupled directly with the GaN device; the GaN having a heterostructure with an undoped GaN channel and a semi-insulating aluminum gallium nitride (AlGaN) barrier, all the foregoing operatively coupled with a substrate; a second layer including titanium coupled over the first layer; and a third layer including an anti-diffusion material coupled with the second layer. A passivation layer may be coupled between the AlGaN barrier and the first layer of the ohmic contact. The passivation layer may surround the ohmic contact.

公开(公告)号：US10032880B2

公开(公告)日：2018-07-24

申请号：US15289519

申请日：2016-10-10

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Aurore Constant ,  Peter Coppens

IPC分类号： H01L29/00 ,  H01L29/45 ,  H01L29/205 ,  H01L29/20 ,  H01L23/31 ,  H01L21/285 ,  H01L29/778

摘要： Implementations of an ohmic contact for a gallium nitride (GaN) device may include: a first layer including aluminum coupled directly with the GaN device; the GaN having a heterostructure with an undoped GaN channel and a semi-insulating aluminum gallium nitride (AlGaN) barrier, all the foregoing operatively coupled with a substrate; a second layer including titanium coupled over the first layer; and a third layer including an anti-diffusion material coupled with the second layer. The passivation layer may be coupled between the AlGaN barrier and the first layer of the ohmic contact. The passivation layer may surround the ohmic contact.

公开(公告)号：US11942326B2

公开(公告)日：2024-03-26

申请号：US17123264

申请日：2020-12-16

申请人： Semiconductor Components Industries, LLC

发明人： Petr Kostelnik ,  Tomas Novak ,  Peter Coppens ,  Peter Moens ,  Abhishek Banerjee

IPC分类号： H01L21/285 ,  H01L21/02 ,  H01L21/3215 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L21/28581 ,  H01L21/0217 ,  H01L21/3215 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/47 ,  H01L29/66462 ,  H01L29/7786

摘要： A process to form a HEMT can have a gate electrode layer that initially has a plurality of spaced-apart doped regions. In an embodiment, any of the spaced-apart doped regions can be formed by depositing or implanting p-type dopant atoms. After patterning, the gate electrode can include an n-type doped region over the p-type doped region. In another embodiment a barrier layer can underlie the gate electrode and include a lower film with a higher Al content and thinner than an upper film. In a further embodiment, a silicon nitride layer can be formed over the gate electrode layer and can help to provide Si atoms for the n-type doped region and increase a Mg:H ratio within the gate electrode. The HEMT can have good turn-on characteristics, low gate leakage when in the on-state, and better time-dependent breakdown as compared to a conventional HEMT.

公开(公告)号：US10741494B2

公开(公告)日：2020-08-11

申请号：US16183078

申请日：2018-11-07

申请人： Semiconductor Components Industries, LLC

发明人： Aurore Constant ,  Peter Coppens ,  Joris Baele

IPC分类号： H01L23/532 ,  H01L21/786 ,  H01L21/04 ,  H01L21/02 ,  H01L29/45 ,  H01L21/285 ,  H01L21/768

摘要： An electronic device can include a semiconductor layer and a contact structure forming an ohmic contact with the layer. In an embodiment, the semiconductor layer can include a III-N material, and the contact structure includes a first phase and a second phase, wherein the first phase includes Al, the second phase includes a metal, and the first phase contacts the semiconductor layer. In another embodiment, the semiconductor layer can be a monocrystalline layer having a surface along a crystal plane. The contact structure can include a polycrystalline material including crystals having surfaces that contact the surface of the monocrystalline layer, wherein a lattice mismatch between the surface of the monocrystalline layer and the surfaces of the crystals is at most 20%.

公开(公告)号：US10680092B2

公开(公告)日：2020-06-09

申请号：US16148127

申请日：2018-10-01

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Peter Moens ,  Aurore Constant ,  Peter Coppens ,  Abhishek Banerjee

IPC分类号： H01L29/778 ,  H01L29/417 ,  H01L29/20 ,  H01L29/205 ,  H01L21/02 ,  H01L29/10 ,  H01L29/66 ,  H01L21/306

摘要： An electronic device can include a channel layer, a first carrier supply layer, a gate electrode of a HEMT, and a drain electrode of the HEMT. The HEMT can have a 2DEG along an interface between the channel and first carrier supply layers. In an aspect, the 2DEG can have a highest density that is the highest at a point between the drain and gate electrodes. In another aspect, the HEMT can further comprise first and second carrier supply layers, wherein the first carrier supply layer is disposed between the channel and second carrier supply layers. The second carrier supply layer be thicker at a location between the drain and gate electrodes. In a further aspect, a process of forming an electronic device can include the HEMT. In a particular embodiment, first and second carrier supply layers can be epitaxially grown from an underlying layer.