公开(公告)号：US20210050420A1

公开(公告)日：2021-02-18

申请号：US16666771

申请日：2019-10-29

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Kwangwon LEE ,  Youngho SEO ,  Martin DOMEIJ ,  Kyeongseok PARK

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/78

Abstract: A power semiconductor device includes a substrate having a body region and a drift layer; a trench formed in the substrate; a gate dielectric structure including a first gate insulation layer having a first dielectric constant and a second gate insulation layer having a second dielectric constant different from the first dielectric constant; and a conductive material provided within the trench over the gate dielectric structure.

公开(公告)号：US20190074385A1

公开(公告)日：2019-03-07

申请号：US15697276

申请日：2017-09-06

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Wonhwa LEE ,  Kwangwon LEE ,  Jaegil LEE

IPC: H01L29/868 ,  H01L29/872 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/868 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0657 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66143 ,  H01L29/872

Abstract: In a general aspect, a device can include a substrate, a first pillar of a first conductivity type, a second pillar of a second conductivity type, the first pillar and the second pillar being alternately disposed, and a metal layer having a first portion disposed on the first pillar and a second portion disposed on the second pillar. The first portion of the metal layer can be wider than the second portion of the metal layer.

公开(公告)号：US20230378273A1

公开(公告)日：2023-11-23

申请号：US18324526

申请日：2023-05-26

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Kwangwon LEE ,  Youngho SEO ,  Martin DOMEIJ ,  Kyeongseok PARK

IPC: H01L29/16 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/1608 ,  H01L29/7813 ,  H01L29/66734

Abstract: A power semiconductor device includes a substrate having a body region and a drift layer; a trench formed in the substrate; a gate dielectric structure including a first gate insulation layer having a first dielectric constant and a second gate insulation layer having a second dielectric constant different from the first dielectric constant; and a conductive material provided within the trench over the gate dielectric structure.

公开(公告)号：US20230282693A1

公开(公告)日：2023-09-07

申请号：US17653669

申请日：2022-03-07

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Kwangwon LEE ,  Youngho SEO ,  Hrishikesh DAS ,  Martin DOMEIJ ,  Kyeongseok PARK

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/167 ,  H01L29/78 ,  H01L21/02 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761 ,  H01L29/66

CPC classification number: H01L29/0634 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/7813 ,  H01L21/02529 ,  H01L21/0465 ,  H01L21/7602 ,  H01L21/761 ,  H01L29/66068

Abstract: Implementations of a semiconductor device may include a trench including a gate and a gate oxide formed therein, the trench extending into a doped pillar of a first conductivity type formed in a substrate material. The device may include a trench channel adjacent to the trench and two doped pillars of a second conductivity type extending on each side of the first conductivity type doped pillar where a ratio of a depth of each of the two second conductivity type doped pillars to a depth of the trench into the substrate material may be at least 1.6 to 1.

公开(公告)号：US20190267496A1

公开(公告)日：2019-08-29

申请号：US16406228

申请日：2019-05-08

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Wonhwa LEE ,  Kwangwon LEE ,  Jaegil LEE

IPC: H01L29/868 ,  H01L29/417 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/872

Abstract: In a general aspect, a method can include forming a first pillar of a first conductivity type and a second pillar of a second conductivity type, alternately disposed with the first pillar. The second pillar can be in direct contact with the first pillar. The method can also include forming an implant of the second conductivity type in an upper portion of the second pillar. The implant can have a doping concentration that is higher than a doping concentration of a lower portion of the second pillar. The method can further include forming a Schottky metal layer having a first portion directly disposed on an upper surface of the first pillar and a second portion directly disposed on the implant along an upper surface of the second pillar. The first portion of the Schottky metal layer can be wider than the second portion of the Schottky metal layer.