公开(公告)号：US10741682B2

公开(公告)日：2020-08-11

申请号：US15807237

申请日：2017-11-08

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul Jeon ,  Ali Salih ,  Llewellyn Vaughan-Edmunds

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/08 ,  H01L29/872 ,  H01L29/66 ,  H01L29/205 ,  H01L29/20 ,  H01L29/06 ,  H01L29/40 ,  H01L29/10

Abstract: High-electron-mobility transistor (HEMT) devices are described in this patent application. In some implementations, the HEMT devices can include a back barrier hole injection structure. In some implementations, the HEMT devices include a conductive striped portion electrically coupled to a drain contact.

公开(公告)号：US20180138306A1

公开(公告)日：2018-05-17

申请号：US15807237

申请日：2017-11-08

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul JEON ,  Ali SALIH ,  Llewellyn Vaughan-Edmunds

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/08

Abstract: High-electron-mobility transistor (HEMT) devices are described in this patent application. In some implementations, the HEMT devices can include a back barrier hole injection structure. In some implementations, the HEMT devices include a conductive striped portion electrically coupled to a drain contact.

公开(公告)号：US11538931B2

公开(公告)日：2022-12-27

申请号：US16947593

申请日：2020-08-07

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul Jeon ,  Ali Salih ,  Llewellyn Vaughan-Edmunds

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/08 ,  H01L29/66 ,  H01L29/205 ,  H01L29/20 ,  H01L29/06 ,  H01L29/40 ,  H01L29/10 ,  H01L29/872

Abstract: A semiconductor device includes a carrier generation layer disposed on a channel layer, a source contact and a drain contact disposed on the carrier generation layer, and a gate contact disposed between the source contact and the drain contact. The semiconductor device further includes a number N of conductive stripes disposed directly on the carrier generation layer in an area between the drain contact and the gate contact, and a number M of conductive transverse stripes disposed directly on the carrier generation layer in the area between the drain contact and the gate contact. Each of the N conductive stripes extends from and is electrically coupled to the drain contact. Each of the M conductive transverse stripes is aligned non-parallel to the N conductive stripes and is not in direct physical contact with the N conductive stripes.

公开(公告)号：US20210013336A1

公开(公告)日：2021-01-14

申请号：US16947593

申请日：2020-08-07

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul JEON ,  Ali SALIH ,  Llewellyn Vaughan-Edmunds

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/08 ,  H01L29/872 ,  H01L29/66

Abstract: High-electron-mobility transistor (HEMT) devices are described in this patent application. In some implementations, the HEMT devices can include a back barrier hole injection structure. In some implementations, the HEMT devices include a conductive striped portion electrically coupled to a drain contact.