公开(公告)号：US20180323273A1

公开(公告)日：2018-11-08

申请号：US15585839

申请日：2017-05-03

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Yi SU ,  Ashok CHALLA ,  Tirthajyoti SARKAR ,  Min Kyung KO

IPC: H01L29/47 ,  H01L29/78 ,  H01L29/872 ,  H01L29/08 ,  H01L29/40

CPC classification number: H01L29/872 ,  H01L29/0623 ,  H01L29/407 ,  H01L29/7839 ,  H01L29/8725

Abstract: In one general aspect, a device can include a first trench disposed in a semiconductor region, a second trench disposed in the semiconductor region, and a recess disposed in the semiconductor region between the first trench and the second trench. The recess has a sidewall and a bottom surface. The device also includes a Schottky interface along a sidewall of the recess and the bottom surface of the recess excludes a Schottky interface.