公开(公告)号：US20240055298A1

公开(公告)日：2024-02-15

申请号：US18490923

申请日：2023-10-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： JeongPyo HONG ,  Mohd Akbar MD SUM ,  Gordon M. GRIVNA

IPC: H01L21/78 ,  H01L21/67 ,  H01L21/3065 ,  H01L23/00

CPC classification number: H01L21/78 ,  H01L21/67069 ,  H01L21/3065 ,  H01L23/564

Abstract: Described implementations include a contaminant-free plasma singulation process, in which residues of materials used during plasma singulation are fully removed from sidewalls of a resulting semiconductor die, without damaging the semiconductor die. From such a contaminant-free plasma singulation process, a semiconductor die may be manufactured. The semiconductor die may include a first plurality of sidewall recesses formed in a sidewall of a substrate of the semiconductor die between a first surface and a second surface of the substrate, each having at most a first depth, as well as a second plurality of sidewall recesses formed in the sidewall of the substrate and disposed between the first plurality of sidewall recesses and the second surface, each having at least a second depth that is greater than the first depth.

公开(公告)号：US20210118734A1

公开(公告)日：2021-04-22

申请号：US16948709

申请日：2020-09-29

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： JeongPyo HONG ,  Mohd Akbar MD SUM ,  Gordon M. GRIVNA

IPC: H01L21/78 ,  H01L23/00 ,  H01L21/3065 ,  H01L21/67

Abstract: Described implementations include a contaminant-free plasma singulation process, in which residues of materials used during plasma singulation are fully removed from sidewalls of a resulting semiconductor die, without damaging the semiconductor die. From such a contaminant-free plasma singulation process, a semiconductor die may be manufactured. The semiconductor die may include a first plurality of sidewall recesses formed in a sidewall of a substrate of the semiconductor die between a first surface and a second surface of the substrate, each having at most a first depth, as well as a second plurality of sidewall recesses formed in the sidewall of the substrate and disposed between the first plurality of sidewall recesses and the second surface, each having at least a second depth that is greater than the first depth.