公开(公告)号：US20200350424A1

公开(公告)日：2020-11-05

申请号：US16947085

申请日：2020-07-17

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Meng-Chia LEE ,  Ralph N. WALL ,  Mingjiao LIU ,  Shamsul Arefin KHAN ,  Gordon M. GRIVNA

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/66 ,  H01L29/40 ,  H01L29/423 ,  H01L29/08

Abstract: In a general aspect, method of producing an insulated-gate bipolar transistor (IGBT) device can include forming a termination structure in an inactive region. The inactive region at least partial surround an active region. The method can also include forming a trench extending along a longitudinal axis in the active region. A first mesa can define a first sidewall of the trench, and a second mesa can define a second sidewall of the trench. The first mesa and the second mesa can be parallel with the trench. The method can further include forming, in at least a portion of the first mesa, an active segment of the IGBT device, and, forming, in at least a portion of the second mesa, an inactive segment of the IGBT device.

公开(公告)号：US20190058055A1

公开(公告)日：2019-02-21

申请号：US15884773

申请日：2018-01-31

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Meng-Chia LEE ,  Ralph N. WALL ,  Mingjiao LIU ,  Shamsul Arefin KHAN ,  Gordon M. GRIVNA

IPC: H01L29/739 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06

Abstract: In a general aspect, an insulated gate bipolar transistor (IGBT) device can include an active region, an inactive region and a trench extending along a longitudinal axis in the active region. The IGBT can also include a first mesa defining a first sidewall of the trench and in parallel with the trench and a second mesa defining a second sidewall of the trench and in parallel with the trench. At least a portion of the first mesa can include an active segment of the IGBT device, and at least a portion of the second mesa can include an inactive segment of the IGBT device.