公开(公告)号：US20250029901A1

公开(公告)日：2025-01-23

申请号：US18353148

申请日：2023-07-17

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Silnore Tejero SABANDO ,  Chee Hiong CHEW

IPC: H01L23/495 ,  H01L21/48 ,  H01L23/498

Abstract: A compact power inverter is efficiently laid out on a multi-layer direct bond metal (DBM) structure, having a reduced footprint and straight, short-run wire bonds. The compact layout reduces an amount of material needed to fabricate a multi-layer DBM that includes a silicon nitride ceramic layer. The layout is further designed so that wire bonds can be routed without bending around corners. The compact DBM structure and short wire bonds provide a solution that is both low-cost and highly reliable.

公开(公告)号：US20220293499A1

公开(公告)日：2022-09-15

申请号：US17804423

申请日：2022-05-27

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jinchang ZHOU ,  Asif JAKWANI ,  Chee Hiong CHEW ,  Yusheng LIN ,  Sravan VANAPARTHY ,  Silnore Tejero SABANDO

IPC: H01L23/495 ,  H01L21/48 ,  H01L23/31

Abstract: Implementations of power modules may include: a substrate having a first side and a second side. The power module may include a plurality of leads coupled to a second side of the substrate and a molding compound over a portion of five or more surfaces of the substrate. The power module may also include an opening extending from a first side of the substrate to an outer edge of the molding compound. The opening may be configured to receive a coupling device and the coupling device may be configured to couple with a heat sink or a package support.

公开(公告)号：US20200098671A1

公开(公告)日：2020-03-26

申请号：US16556541

申请日：2019-08-30

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jinchang ZHOU ,  Asif JAKWANI ,  Chee Hiong CHEW ,  Yusheng LIN ,  Sravan VANAPARTHY ,  Silnore Tejero SABANDO

IPC: H01L23/495 ,  H01L23/31 ,  H01L21/48

Abstract: Implementations of power modules may include: a substrate having a first side and a second side. The power module may include a plurality of leads coupled to a second side of the substrate and a molding compound over a portion of five or more surfaces of the substrate. The power module may also include an opening extending from a first side of the substrate to an outer edge of the molding compound. The opening may be configured to receive a coupling device and the coupling device may be configured to couple with a heat sink or a package support.