SEMICONDUCTOR DEVICE AND PEELING OFF METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND PEELING OFF METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    半导体器件和剥离方法及制造半导体器件的方法

    公开(公告)号:US20170047358A1

    公开(公告)日:2017-02-16

    申请号:US15335854

    申请日:2016-10-27

    Abstract: The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.

    Abstract translation: 本发明提供一种剥离方法,而不会对剥离层造成损害,其目的在于,不仅剥离面积小的剥离层,而且能够剥离整个表面上具有大面积的剥离层 优良的产率。 金属层或氮化物层11设置在基板上,并且还提供与上述金属层或氮化物层11接触的氧化物层12,此外,如果层叠膜形成或500℃的热处理 或更高的温度,可以通过物理手段在层中或与氧化物层12的界面上容易且清楚地分离。

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