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    SEMICONDUCTOR DEVICE AND DETERMINATION SYSTEM
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND DETERMINATION SYSTEM 有权

    公开(公告)号：US20220383657A1

    公开(公告)日：2022-12-01

    申请号：US17760797

    申请日：2020-09-22

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Seiko INOUE ,  Ayana KIMOTSUKI ,  Atsuya TOKINOSU

    IPC: G06V40/16 ,  G06V10/44 ,  G06V10/94 ,  G06V10/82

    Abstract: Power consumption of a circuit which makes a determination is reduced. The accuracy of a system which makes a determination is improved. The safety of a target object which is monitored by a sensor element is increased. A system which easily monitors a target object is provided. A semiconductor device includes a detection circuit having a function of analyzing first data and making a first determination of selecting a first value or a second value, a first determination circuit and a second determination circuit having a function of performing feature extraction of an image, a power supply circuit, and a power management unit. The power management unit has a function of allowing a voltage to be supplied from the power supply circuit to the first determination circuit in the case where the first value is selected by the first determination. The first determination circuit has a function of analyzing the first data and making a second determination. The second determination circuit has a function of analyzing the first data and making a third determination in the case where an occurrence of an event is detected in the second determination.

    LIGHT-EMITTING DEVICE
    2.
    发明申请
    LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20210358410A1

    公开(公告)日：2021-11-18

    申请号：US17388366

    申请日：2021-07-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Seiko INOUE ,  Hiroyuki MIYAKE

    IPC: G09G3/3233 ,  H01L27/12

    Abstract: A light-emitting device in which variation in luminance of pixels is suppressed. A light-emitting device includes at least a transistor, a first wiring, a second wiring, a first switch, a second switch, a third switch, a fourth switch, a capacitor, and a light-emitting element. The first wiring and a first electrode of the capacitor are electrically connected to each other through the first switch. A second electrode of the capacitor is connected to a first terminal of the transistor. The second wiring and a gate of the transistor are electrically connected to each other through the second switch. The first electrode of the capacitor and the gate of the transistor are electrically connected to each other through the third switch. The first terminal of the transistor and an anode of the light-emitting element are electrically connected to each other through the fourth switch.

    DISPLAY DEVICE
    3.
    发明申请
    DISPLAY DEVICE 有权

    公开(公告)号：US20210116970A1

    公开(公告)日：2021-04-22

    申请号：US17109420

    申请日：2020-12-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yoshiharu HIRAKATA ,  Hiroyuki MIYAKE ,  Seiko INOUE ,  Shunpei YAMAZAKI

    IPC: G06F1/16 ,  G06F3/041

    Abstract: A display device with low power consumption is provided. Furthermore, a display device in which an image is displayed in a region that can be used in a folded state is provided. The conceived display device includes a display portion that can be opened and folded, a sensing portion that senses a folded state of the display portion, and an image processing portion that generates, when the display portion is in the folded state, an image in which a black image is displayed in part of the display portion.

    SEMICONDUCTOR DEVICE, DISPLAY APPARATUS, AND ELECTRONIC DEVICE
    5.
    发明公开
    SEMICONDUCTOR DEVICE, DISPLAY APPARATUS, AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20240257751A1

    公开(公告)日：2024-08-01

    申请号：US18560718

    申请日：2022-05-17

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuto YAKUBO ,  Kouhei TOYOTAKA ,  Seiko INOUE ,  Yoshiyuki KUROKAWA

    IPC: G09G3/3233

    CPC classification number: G09G3/3233 ,  G09G2310/08 ,  G09G2330/021 ,  G09G2360/14

    Abstract: A semiconductor device including a display pixel circuit and an imaging pixel circuit is provided. The semiconductor device includes first and second circuits; the first circuit includes a light-emitting device; and the second circuit includes a light-receiving device, first to fifth transistors, and a first capacitor. The light-receiving device includes first and second terminals, and the light-emitting device includes third and fourth terminals. A first terminal of the first transistor is electrically connected to a first terminal of the second transistor, and a gate of the second transistor is electrically connected to a first terminal of the third transistor and a first terminal of the first capacitor. A second terminal of the first capacitor is electrically connected to a first terminal of the fourth transistor and a first terminal of the fifth transistor. A second terminal of the fifth transistor is electrically connected to the first terminal of the light-receiving device, the second terminal of the light-receiving device is electrically connected to the third terminal of the light-emitting device, and the fourth terminal of the light-emitting device is electrically connected to a wiring.

    IMAGING SYSTEM AND MONITORING SYSTEM
    6.
    发明申请
    IMAGING SYSTEM AND MONITORING SYSTEM 有权

    公开(公告)号：US20220417390A1

    公开(公告)日：2022-12-29

    申请号：US17764622

    申请日：2020-09-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kengo AKIMOTO ,  Seiko INOUE ,  Daichi MISHIMA

    IPC: H04N1/60

    Abstract: Color filters are used for color images obtained using imaging devices such as conventional image sensors. Imaging elements with color filters are sold, and an appropriate combination of the imaging element and a lens or the like is incorporated in an electronic device. Only providing a color filter to overlap a light-receiving region of an image sensor reduces the amount of light reaching the light-receiving region. An imaging system of the present invention includes a solid-state imaging element without a color filter, a storage device, and a learning device. Since the color filter is not included, colorization is performed on obtained monochrome image data (analog data), and coloring is performed using an AI system.

    METHOD FOR PREDICTING ELECTRICAL CHARACTERISTICS OF SEMICONDUCTOR ELEMENT
    7.
    发明申请
    METHOD FOR PREDICTING ELECTRICAL CHARACTERISTICS OF SEMICONDUCTOR ELEMENT 有权

    公开(公告)号：US20220252658A1

    公开(公告)日：2022-08-11

    申请号：US17611987

    申请日：2020-05-11

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Seiko INOUE ,  Yusuke KOUMURA ,  Takahiro FUKUTOME

    IPC: G01R31/26 ,  G01R31/28 ,  G06N3/04

    Abstract: The electrical characteristics of a semiconductor element are predicted from a process list. A feature-value calculation portion and a feature prediction portion are used to predict the electrical characteristics of the semiconductor element. The feature-value calculation portion includes a first learning model and a second learning model, and the feature prediction portion includes a third learning model. The first learning model includes a step of learning the process list for generating the semiconductor element and a step of generating a first feature value. The second learning model includes a step of learning the electrical characteristics of the semiconductor element generated in accordance with the process list and a step of generating a second feature value. The third learning model includes a step of performing multimodal learning with use of the first feature value and the second feature value and a step of outputting a value of a variable used in a formula for the semiconductor element characteristics. The first to third learning models include neural networks different from each other.

    DISPLAY DEVICE AND ELECTRONIC DEVICE
    8.
    发明申请
    DISPLAY DEVICE AND ELECTRONIC DEVICE 有权
    显示设备和电子设备

    公开(公告)号：US20140240631A1

    公开(公告)日：2014-08-28

    申请号：US14184996

    申请日：2014-02-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hideaki SHISHIDO ,  Hiroyuki MIYAKE ,  Seiko INOUE ,  Kouhei TOYOTAKA ,  Koji KUSUNOKI

    IPC: G02F1/1362

    CPC classification number: G02F1/136286 ,  G02F1/136204 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/66

    Abstract: Transistors each include a gate electrode, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over the oxide semiconductor layer. A driver circuit portion includes first to third wirings formed in the same step as the gate electrode, fourth to sixth wirings formed in the same step as the source electrode and the drain electrode, a seventh wiring formed in the same step as a pixel electrode, a first region where the second wiring intersects with the fifth wiring, and a second region where the third wiring intersects with the sixth wiring. The first wiring is connected to the fourth wiring through the seventh wiring. A distance between the wirings in the second region is longer than that in the first region.

    Abstract translation: 晶体管各自包括栅电极，栅电极上的栅极绝缘层，栅极绝缘层上的氧化物半导体层，以及氧化物半导体层上的源电极和漏电极。 驱动器电路部分包括以与栅电极相同的步骤形成的第一至第三布线，以与源电极和漏电极相同的步骤形成的第四至第六布线，与像素电极在相同步骤中形成的第七布线， 第二布线与第五布线相交的第一区域和第三布线与第六布线相交的第二区域。 第一布线通过第七布线连接到第四布线。 第二区域中的布线之间的距离比第一区域长。

    LIGHT-EMITTING DEVICE
    10.
    发明公开
    LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20230395028A1

    公开(公告)日：2023-12-07

    申请号：US18236966

    申请日：2023-08-23

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Seiko INOUE ,  Hiroyuki MIYAKE

    IPC: G09G3/3233 ,  H01L27/12

    CPC classification number: G09G3/3233 ,  G09G3/3291 ,  H01L27/1225

    Abstract: A light-emitting device in which variation in luminance of pixels is suppressed. A light-emitting device includes at least a transistor, a first wiring, a second wiring, a first switch, a second switch, a third switch, a fourth switch, a capacitor, and a light-emitting element. The first wiring and a first electrode of the capacitor are electrically connected to each other through the first switch. A second electrode of the capacitor is connected to a first terminal of the transistor. The second wiring and a gate of the transistor are electrically connected to each other through the second switch. The first electrode of the capacitor and the gate of the transistor are electrically connected to each other through the third switch. The first terminal of the transistor and an anode of the light-emitting element are electrically connected to each other through the fourth switch.

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