公开(公告)号：US20250061746A1

公开(公告)日：2025-02-20

申请号：US18939631

申请日：2024-11-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tatsuya OKANO ,  Teppei OGUNI ,  Kengo AKIMOTO

IPC: G06V40/20 ,  G06V10/74 ,  G06V10/762 ,  G06V10/82 ,  G06V40/16

Abstract: A data processing system that can sense fatigue or the like using a neural network is provided. First, a reference image is obtained on the basis of first to n-th images (n is an integer greater than or equal to 2). Next, the first to n-th images and the reference image are input to an input layer of a neural network, first to n-th estimated ages and a reference estimated age are output from an output layer, and first to n-th data and reference data are output from an intermediate layer. After that, first to n-th coordinates are obtained in each of which an x-coordinate is a value corresponding to a difference between the reference estimated age and the first to n-th estimated ages and a y-coordinate is a value corresponding to the degree of similarity between the reference data and the first to n-th data. Next, a query image is input to the input layer, a query estimated age is output from the output layer, query data is output from the intermediate layer, and query coordinates are obtained using the output results. Whether a person of a face included in the query image feels fatigue or the like is determined on the basis of the first to n-th coordinates and the query coordinates.

公开(公告)号：US20240079499A1

公开(公告)日：2024-03-07

申请号：US18381668

申请日：2023-10-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Kengo AKIMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  C01G15/00 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  C01G15/006 ,  G02F1/134309 ,  G02F1/136213 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02609 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696 ,  H10K59/1213

Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0

公开(公告)号：US20230140016A1

公开(公告)日：2023-05-04

申请号：US18089708

申请日：2022-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Atsushi UMEZAKI

IPC: H01L27/12 ,  G02F1/1362 ,  H10K59/131 ,  H01L29/786

Abstract: With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. Due to the increase in the numbers of gate lines and signal lines, it is difficult to mount an IC chip having a driver circuit for driving the gate and signal lines by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit for driving the pixel portion are formed over one substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor is used. The driver circuit as well as the pixel portion is provided over the same substrate, whereby manufacturing costs are reduced.

公开(公告)号：US20220417390A1

公开(公告)日：2022-12-29

申请号：US17764622

申请日：2020-09-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Seiko INOUE ,  Daichi MISHIMA

IPC: H04N1/60

Abstract: Color filters are used for color images obtained using imaging devices such as conventional image sensors. Imaging elements with color filters are sold, and an appropriate combination of the imaging element and a lens or the like is incorporated in an electronic device. Only providing a color filter to overlap a light-receiving region of an image sensor reduces the amount of light reaching the light-receiving region. An imaging system of the present invention includes a solid-state imaging element without a color filter, a storage device, and a learning device. Since the color filter is not included, colorization is performed on obtained monochrome image data (analog data), and coloring is performed using an AI system.

公开(公告)号：US20220344054A1

公开(公告)日：2022-10-27

申请号：US17640842

申请日：2020-09-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teppei OGUNI ,  Kengo AKIMOTO ,  Tatsuya OKANO

IPC: G16H50/30 ,  G06N7/00

Abstract: A method for estimating the state of a target person in consideration of an individual difference is provided. The method includes a step of estimating the state of the target person from second data that includes speed of change in pupil area of the target person using a statistical model where a parameter is estimated from first data that includes a plurality of sets of data on speed of change in pupil area of a plurality of persons and data on the states of the plurality of persons, and a step of outputting an estimation result of the state of the target person. Note that the statistical model is a hierarchical Bayesian model using ordered logistic regression where a linear predictor is the sum of an intercept, the product of a partial regression coefficient and an explanatory variable, and a parameter showing an individual difference.

公开(公告)号：US20220245877A1

公开(公告)日：2022-08-04

申请号：US17626310

申请日：2020-07-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Junpei MOMO ,  Takahiro FUKUTOME

IPC: G06T11/60 ,  G06T7/73 ,  G06T11/20 ,  G06F40/40

Abstract: Text is generated from an object. Text is generated from a first object. The first object includes a second object and a third object. A step of detecting coordinate data of the second object is included. A step of detecting coordinate data of the third object is included. A step of extracting positional relation between the second object and the third object from coordinate data is included. A step of converting the extracted positional relation into graph data is included. A step of generating text about the positional relation between the second object and the third object from graph data is included.

公开(公告)号：US20220115412A1

公开(公告)日：2022-04-14

申请号：US17560479

申请日：2021-12-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Akiharu MIYANAGA ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66

Abstract: An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

公开(公告)号：US20210391479A1

公开(公告)日：2021-12-16

申请号：US17458713

申请日：2021-08-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO

IPC: H01L29/786 ,  H01L29/49 ,  H01L21/02 ,  H01L29/66 ,  H01L29/24

Abstract: An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.

公开(公告)号：US20210288210A1

公开(公告)日：2021-09-16

申请号：US17333402

申请日：2021-05-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI

IPC: H01L33/00 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to foiiii an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.

公开(公告)号：US20200219904A1

公开(公告)日：2020-07-09

申请号：US16823691

申请日：2020-03-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Atsushi UMEZAKI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/423 ,  H01L29/24

Abstract: A pixel portion and a driver circuit driving the pixel portion are formed over the same substrate. At least a part of the driver circuit is faulted using an inverted staggered thin film transistor in which an oxide semiconductor layer is used and a channel protective layer is provided over the oxide semiconductor layer serving as a channel formation region which is overlapped with the gate electrode. The driver circuit as well as the pixel portion is provided over the same substrate to reduce manufacturing costs.