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公开(公告)号：US10074650B2
公开(公告)日：2018-09-11
申请号：US15145776
申请日：2016-05-03
发明人： Herb He Huang , Haiting Li , Xingcheng Jin , Xinxue Wang , Hongbo Zhao , Fucheng Chen , Yanghui Xiang
IPC分类号： H01L27/12 , H01L27/088 , H01L29/06 , H01L29/49 , H01L29/167 , H01L27/06 , H01L23/66 , H01L49/02
CPC分类号： H01L27/088 , H01L21/76264 , H01L21/84 , H01L23/66 , H01L27/0629 , H01L27/1203 , H01L28/10 , H01L29/0649 , H01L29/167 , H01L29/4975
摘要： A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The semiconductor device also includes a plurality of transistors on the second semiconductor substrate, a deep trench isolation having a bottom at a surface of the first semiconductor substrate in the second region, the deep trench isolation exposing a sidewall of the second semiconductor substrate and a sidewall of the buried insulating layer, and a dielectric capping layer filling the deep trench isolation and covering the plurality of transistors on the second semiconductor substrate.
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公开(公告)号：US09349748B2
公开(公告)日：2016-05-24
申请号：US14564081
申请日：2014-12-08
发明人： Herb He Huang , Haiting Li , Xingcheng Jin , Xinxue Wang , Hongbo Zhao , Fucheng Chen , Yanghui Xiang
IPC分类号： H01L21/84 , H01L21/762 , H01L27/12 , H01L29/06
CPC分类号： H01L27/088 , H01L21/76224 , H01L21/76264 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/0653 , H01L29/167 , H01L29/4975
摘要： A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The method of forming the semiconductor device includes providing a SOI substrate having shallow trench isolations (STIs) and transistors formed within and on the second semiconductor substrate, respectively. The method also includes forming a hard mask over the first region and removing the STIs, the transistors, the second semiconductor substrate and the buried insulating layer in the second region using the hard mask as a mask, and forming a capping layer covering the deep trench isolation and the second semiconductor substrate including the transistors.
摘要翻译： 半导体器件包括具有第一半导体衬底，掩埋绝缘层和形成在第一区域中的第二半导体衬底和设置在第二区域中的深沟槽隔离的堆叠的绝缘体上硅（SOI）衬底。 形成半导体器件的方法包括提供分别形成在第二半导体衬底内和第二半导体衬底上的浅沟槽隔离（STI）和晶体管的SOI衬底。 该方法还包括在第一区域上形成硬掩模，并使用硬掩模作为掩模去除第二区域中的STI，晶体管，第二半导体衬底和埋入绝缘层，并且形成覆盖深沟槽的覆盖层 隔离和包括晶体管的第二半导体衬底。
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公开(公告)号：US20150187794A1
公开(公告)日：2015-07-02
申请号：US14564081
申请日：2014-12-08
发明人： Herb He Huang , Haiting Li , Xingcheng Jin , Xinxue Wang , Hongbo Zhao , Fucheng Chen , Yanghui Xiang
IPC分类号： H01L27/12 , H01L21/84 , H01L21/762 , H01L29/06
CPC分类号： H01L27/088 , H01L21/76224 , H01L21/76264 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/0653 , H01L29/167 , H01L29/4975
摘要： A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The method of forming the semiconductor device includes providing a SOI substrate having shallow trench isolations (STIs) and transistors formed within and on the second semiconductor substrate, respectively. The method also includes forming a hard mask over the first region and removing the STIs, the transistors, the second semiconductor substrate and the buried insulating layer in the second region using the hard mask as a mask, and forming a capping layer covering the deep trench isolation and the second semiconductor substrate including the transistors.
摘要翻译： 半导体器件包括具有第一半导体衬底，掩埋绝缘层和形成在第一区域中的第二半导体衬底和设置在第二区域中的深沟槽隔离的堆叠的绝缘体上硅（SOI）衬底。 形成半导体器件的方法包括提供分别形成在第二半导体衬底内和第二半导体衬底上的浅沟槽隔离（STI）和晶体管的SOI衬底。 该方法还包括在第一区域上形成硬掩模，并使用硬掩模作为掩模去除第二区域中的STI，晶体管，第二半导体衬底和埋入绝缘层，并且形成覆盖深沟槽的覆盖层 隔离和包括晶体管的第二半导体衬底。
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公开(公告)号：US10715942B2
公开(公告)日：2020-07-14
申请号：US16018870
申请日：2018-06-26
申请人： Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
发明人： Mingjun Wang , Xinxue Wang
摘要： A microphone and its manufacturing method are presented. The manufacturing method includes providing a substrate; forming a ring opening extending from an upper surface of the substrate into the substrate; forming a ring separation component by forming a separation material in the ring opening; forming an insulation layer on the substrate; forming a front-end device on the insulation layer; and etching a back side of the substrate using the ring separation component and the insulation layer as an etch-stop layer to form a back-hole.
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公开(公告)号：US09630833B2
公开(公告)日：2017-04-25
申请号：US14864851
申请日：2015-09-24
发明人： Liang Ni , Xinxue Wang
CPC分类号： B81C1/0015
摘要： A method of manufacturing a cantilever structure includes providing a semiconductor substrate, forming a recess in the semiconductor substrate, forming a sacrificial layer in the recess, forming a cantilever structure layer on the semiconductor substrate and the sacrificial layer, performing an etching process to remove a portion of the cantilever structure layer until a surface of the sacrificial layer is exposed to form a cantilever structure and an opening, and removing a portion of the sacrificial layer to form a void below the cantilever structure so that the cantilever structure is suspended in the void. The cantilever structure thus formed has good morphological properties to ensure that the cantilever structure is free of residues at the bottom and has excellent suspension even if the width of the cantilever structure is relatively large.
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