公开(公告)号：US20170091025A1

公开(公告)日：2017-03-30

申请号：US15059102

申请日：2016-03-02

申请人： SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION ,  WISCONSIN ALUMNI RESEARCH FOUNDATION

发明人： Jung Ho AHN ,  Namsung KIM

IPC分类号： G06F11/10 ,  G06F3/06 ,  H03M13/29 ,  G11C29/52 ,  H03M13/17

CPC分类号： G06F11/1024 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0679 ,  G06F11/1048 ,  H03M13/19 ,  H03M13/2909 ,  H03M13/2927

摘要： A memory system and a method for the error correction of memory are disclosed herein. The method for the error correction of memory is performed by a memory system including a plurality of memory chips. The method for the error correction of memory may include reading, by a first ECC engine unit included in each of a plurality of memory chips, a chunk including a plurality of data bursts, first parity bits, and position bits from each of the plurality of memory chips; extracting, by the first ECC engine unit, a single data burst having an error from the plurality of data bursts using the position bits; and performing, by the first ECC engine unit, first error correction using the first parity bit corresponding to the extracted error data burst.