利索-全球专利检索

  1. Login
  2. Sign Up

Search Results

31 records (took 0.019 seconds)

    Semiconductor device and method for manufacturing same
    3.
    发明授权
    Semiconductor device and method for manufacturing same 有权

    公开(公告)号：US10741696B2

    公开(公告)日：2020-08-11

    申请号：US16336481

    申请日：2017-09-21

    Applicant: Sharp Kabushiki Kaisha

    Inventor： Masahiko Suzuki ,  Hajime Imai ,  Hideki Kitagawa ,  Tetsuo Kikuchi ,  Setsuji Nishimiya ,  Teruyuki Ueda ,  Kengo Hara ,  Tohru Daitoh ,  Toshikatsu Itoh

    IPC: H01L29/786 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1368 ,  H01L21/02 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  G02F1/1362

    Abstract: A semiconductor device includes a thin film transistor including a semiconductor layer, a gate electrode, a gate insulating layer, a source electrode, a drain electrode, the semiconductor layer includes a layered structure including a first oxide semiconductor layer including In and Zn, in which an atomic ratio of In with respect to all metallic elements included in the first oxide semiconductor layer is higher than an atomic ratio of Zn, a second oxide semiconductor layer including In and Zn, in which an atomic ratio of Zn with respect to all metallic elements included in the second oxide semiconductor layer is higher than an atomic ratio of In, and an intermediate oxide semiconductor layer arranged between the first oxide semiconductor layer and the second oxide semiconductor layer, and the first and second oxide semiconductor layers are crystalline oxide semiconductor layers, and the intermediate oxide semiconductor layer is an amorphous oxide semiconductor layer, and the first oxide semiconductor layer is arranged nearer to the gate insulating layer than the second oxide semiconductor layer.

    Semiconductor device including oxide semiconductor thin-film transistor having multilayer structure oxide semiconductor layer
    4.
    发明授权
    Semiconductor device including oxide semiconductor thin-film transistor having multilayer structure oxide semiconductor layer 有权

    公开(公告)号：US10593809B2

    公开(公告)日：2020-03-17

    申请号：US16182643

    申请日：2018-11-07

    Applicant: Sharp Kabushiki Kaisha

    Inventor： Masahiko Suzuki ,  Tohru Daitoh ,  Hajime Imai ,  Tetsuo Kikuchi ,  Setsuji Nishimiya ,  Teruyuki Ueda ,  Kengo Hara

    IPC: H01L29/10 ,  H01L21/00 ,  H01L29/786

    Abstract: A semiconductor device includes a substrate and an oxide semiconductor TFT including an oxide semiconductor layer supported by the substrate and having a multilayer structure including a protective oxide semiconductor layer and a channel oxide semiconductor layer disposed closer to the substrate than the protective oxide semiconductor layer, an upper insulating layer on the oxide semiconductor layer, an upper gate electrode disposed on the upper insulating layer, an interlayer insulating layer covering the oxide semiconductor layer and the upper gate electrode, and first and second electrodes electrically connected to the oxide semiconductor layer, wherein a first opening extends through at least the interlayer insulating layer and the protective oxide semiconductor layer, and exposes a portion of the channel oxide semiconductor layer, and the first electrode is disposed on the interlayer insulating layer and within the first opening, and is in direct contact with, within the first opening, the portion.

    Active matrix substrate
    5.
    发明授权
    Active matrix substrate 有权

    公开(公告)号：US12034010B2

    公开(公告)日：2024-07-09

    申请号：US18119624

    申请日：2023-03-09

    Applicant: Sharp Kabushiki Kaisha

    Inventor： Masahiko Suzuki ,  Tetsuo Kikuchi ,  Hideki Kitagawa ,  Setsuji Nishimiya ,  Kengo Hara ,  Hitoshi Takahata ,  Tohru Daitoh

    IPC: H01L27/12 ,  H01L29/786 ,  H01L29/00

    CPC classification number: H01L27/124 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/127 ,  H01L29/7869 ,  H01L29/78696

    Abstract: An active matrix substrate includes a plurality of gate bus lines, a plurality of source bus lines located closer to the substrate side; a lower insulating layer that covers the source bus lines; an interlayer insulating layer that covers the gate bus lines; a plurality of oxide semiconductor TFTs disposed in association with respective pixel regions; a pixel electrode disposed in each of the pixel regions; and a plurality of source contact portions each of which electrically connects one of the oxide semiconductor TFTs to the corresponding one of the source bus lines, in which each of the oxide semiconductor TFTs includes an oxide semiconductor layer disposed on the lower insulating layer, a gate electrode disposed on a portion of the oxide semiconductor layer, and a source electrode formed of a conductive film, and each of the source contact portions includes a source contact hole, and a connection electrode.

    Thin film transistor array substrate and method of producing the same
    9.
    发明授权
    Thin film transistor array substrate and method of producing the same 有权

    公开(公告)号：US10797082B2

    公开(公告)日：2020-10-06

    申请号：US16132509

    申请日：2018-09-17

    Applicant: Sharp Kabushiki Kaisha

    Inventor： Tetsuo Kikuchi ,  Tohru Daitoh ,  Hajime Imai ,  Masahiko Suzuki ,  Setsuji Nishimiya ,  Teruyuki Ueda ,  Kengo Hara

    IPC: H01L27/12 ,  G02F1/1345 ,  G02F1/1343 ,  G02F1/1333 ,  G06F3/041 ,  G02F1/1362 ,  H01L29/45 ,  G06F3/044

    Abstract: A TFT array substrate includes gate electrodes constructed from a first metal film, a first insulating film on the first metal film, channels constructed from a semiconductor film on the first insulating film, source electrodes constructed from a second metal film on the semiconductor film, drain electrodes constructed from the second metal film, pixel electrodes constructed from portions of the semiconductor film having reduced resistances, a second insulating film on the semiconductor film and the second metal film, and a common electrode constructed from a transparent electrode film on the second insulating film. The channels overlap the gate electrodes. The source electrodes and the drain electrodes are connected to first ends and second ends of the channels, respectively. The pixel electrodes are connected to the drain electrodes. The second insulating film includes sections overlapping the pixel electrodes without openings. The common electrode overlaps at least the pixel electrodes.

Patent Agency Ranking