公开(公告)号：US20190189811A1

公开(公告)日：2019-06-20

申请号：US16326182

申请日：2017-08-14

申请人： SHARP KABUSHIKI KAISHA

发明人： TERUAKI HIGO ,  CHIKAO OKAMOTO ,  MASAMICHI KOBAYASHI ,  MASAHITO ISHII ,  TAKESHI MORI ,  YUTA MATSUMOTO

IPC分类号： H01L31/0224 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/0747 ,  H01L31/20

CPC分类号： H01L31/022433 ,  H01L31/02013 ,  H01L31/0224 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/0747 ,  H01L31/202 ,  Y02E10/50

摘要： A photovoltaic device includes: a p- or n-type semiconductor substrate; a p-type amorphous semiconductor film and an n-type amorphous semiconductor film on a first-face side; p-electrodes on the p-type amorphous semiconductor film; and n-electrodes on the n-type amorphous semiconductor film, wherein: the p-electrodes and the n-electrodes are arranged at intervals; the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate; the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.

公开(公告)号：US20190044017A1

公开(公告)日：2019-02-07

申请号：US15759661

申请日：2016-08-18

申请人： SHARP KABUSHIKI KAISHA

发明人： TAKESHI MORI ,  YUTA MATSUMOTO ,  YOSHITAKA ZENITANI

IPC分类号： H01L31/0747 ,  H01L31/075 ,  H01L31/0236 ,  H01L31/18

CPC分类号： H01L31/0747 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/075 ,  H01L31/18 ,  Y02E10/50

摘要： A photovoltaic device includes a liquid-repelling layer between the edges of a first amorphous semiconductor layer and the edges of a second amorphous semiconductor layer. No such a liquid-repelling layer is provided between the first amorphous semiconductor layer and the second amorphous semiconductor layer, except between the edges of the first amorphous semiconductor layer and the edges of the second amorphous semiconductor layer. The semiconductor layer in the photovoltaic device is therefore precisely patterned.

公开(公告)号：US20190296164A1

公开(公告)日：2019-09-26

申请号：US16365144

申请日：2019-03-26

申请人： SHARP KABUSHIKI KAISHA

发明人： TERUAKI HIGO ,  TAKESHI MORI ,  MAKOTO HIGASHIKAWA

IPC分类号： H01L31/0224 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/20

摘要： The n-type amorphous semiconductor layers 4 are on parts of that one of the faces of the semiconductor substrate 1, there being provided no p-type amorphous semiconductor layers 5 in the parts. The electrodes 6 are disposed on the n-type amorphous semiconductor layers 4. The electrodes 7 are disposed on the p-type amorphous semiconductor layers 5. The p-type amorphous semiconductor layers 5 between those n-type amorphous semiconductor layers 4 which are adjacent along an in-plane direction of the semiconductor substrate 1 include, arranged along a first direction that points from the n-type amorphous semiconductor layers 4 toward the adjacent n-type amorphous semiconductor layers 4: first and second electrode-provided regions where the electrodes 7 are disposed; and a no-electrode-provided region, between the first and second electrode-provided regions, where there are provided no electrodes 7.

公开(公告)号：US20220271178A1

公开(公告)日：2022-08-25

申请号：US17668058

申请日：2022-02-09

申请人： SHARP KABUSHIKI KAISHA

发明人： TERUAKI HIGO ,  CHIKAO OKAMOTO ,  MASAMICHI KOBAYASHI ,  MASAHITO ISHII ,  TAKESHI MORI ,  YUTA MATSUMOTO

IPC分类号： H01L31/0224 ,  H01L31/0747 ,  H01L31/0352 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/20

摘要： A photovoltaic device includes: a p- or n-type semiconductor substrate; a p-type amorphous semiconductor film and an n-type amorphous semiconductor film on a first-face side; p-electrodes on the p-type amorphous semiconductor film; and n-electrodes on the n-type amorphous semiconductor film, wherein: the p-electrodes and the n-electrodes are arranged at intervals; the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate; the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.