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公开(公告)号:US20190103300A1
公开(公告)日:2019-04-04
申请号:US16143927
申请日:2018-09-27
Applicant: SHIBAURA MECHATRONICS CORPORATION
Inventor: Daisuke ONO
IPC: H01L21/687 , H01J37/32 , C23C14/34
Abstract: A film formation apparatus includes a film formation unit which includes a film formation room having an opening at one end, has a target formed of a film formation material in the film formation room, and deposits the film formation material of the target on a surface of a workpiece facing the opening by plasma produced by a sputter gas in the film formation room, and a carrier that carries the workpiece along a predetermined carrying path so that the workpiece repeatedly pass through a facing region which faces the opening of the film formation room and a non-facing region which does not face the opening of the film formation room. The carrier includes a low-pressure position where the workpiece is placed and which causes an interior of the film formation room to be lower than a plasma ignition lower limit pressure and to be equal to or higher than a plasma electric discharge maintaining lower limit pressure when passing through the facing region, and a high-pressure position where workpiece is not placed and which causes the interior of the film formation room to be equal to or higher than the plasma ignition lower limit pressure when passing through the facing region.
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公开(公告)号:US20190074167A1
公开(公告)日:2019-03-07
申请号:US16123709
申请日:2018-09-06
Applicant: SHIBAURA MECHATRONICS CORPORATION
Inventor: Daisuke ONO , Yu KAMBE
Abstract: A film formation apparatus includes a chamber which has an interior capable of being vacuumed, and which includes a lid that is openable and closable on the upper part of the chamber, a rotation table which is provided in the chamber and which and carries a workpiece in the circular trajectory, a film formation unit that deposits film formation materials by sputtering on the workpiece carried by the rotation table to form films, a shielding member which is provided with an opening at the side which the workpiece passes through, and which forms a film formation room where the film formations by the film formation units are performed, and a support which supports the shielding member, and which is independent relative to the chamber and is independent from the lid.
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公开(公告)号:US20180286644A1
公开(公告)日:2018-10-04
申请号:US15941817
申请日:2018-03-30
Applicant: SHIBAURA MECHATRONICS CORPORATION
Inventor: Yoshio KAWAMATA , Daisuke ONO
IPC: H01J37/34 , H01J37/32 , H01L21/687 , H01L21/02 , H01L21/285
Abstract: A plasma processing apparatus includes a vacuum container, a conveyance unit including a rotator and circulating and carrying a workpiece through the conveyance path, a cylindrical member having an opening at one end extended in the direction toward the conveyance path, a window member provided at the cylindrical member, and dividing a gas space from the exterior thereof, a supply unit supplying the process gas in the gas space, and an antenna generating inductive coupling plasma on the workpiece. The supply unit supplies the process gas from plural locations where a passing time at which the surface of the rotator passes through a process region is different, and the plasma processing apparatus further includes an adjusting unit individually adjusting the supply amounts of the process gas from the plural locations of the supply unit per a unit time in accordance with the passing time.
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