公开(公告)号：US20210305171A1

公开(公告)日：2021-09-30

申请号：US17205098

申请日：2021-03-18

Applicant: Shibaura Mechatronics Corporation

Inventor： Hisashi NISHIGAKI ,  Atsushi FUJITA ,  Shohei TANABE ,  Yoshinao KAMO ,  Shigeki MATSUNAKA

IPC: H01L23/552 ,  H01F10/26 ,  H01F10/30 ,  H05K9/00 ,  H01L23/00

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

公开(公告)号：US20230326875A1

公开(公告)日：2023-10-12

申请号：US18328892

申请日：2023-06-05

Applicant: Shibaura Mechatronics Corporation

Inventor： Hisashi NISHIGAKI ,  Atsushi FUJITA ,  Shohei TANABE ,  Yoshinao KAMO ,  Shigeki MATSUNAKA

IPC: H01L23/552 ,  H01F10/26 ,  H01F10/30 ,  H01L23/00 ,  H05K9/00

CPC classification number: H01L23/552 ,  H01F10/265 ,  H01F10/30 ,  H01L24/32 ,  H05K9/0088 ,  H01L2924/3025 ,  H01L2224/32225

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

公开(公告)号：US20220319820A1

公开(公告)日：2022-10-06

申请号：US17657262

申请日：2022-03-30

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Hisashi NISHIGAKI ,  Koji YOSHIMURA

IPC: H01J37/32 ,  C23C14/50 ,  C23C14/34 ,  C23C14/56 ,  C23C14/54

Abstract: According to one embodiment, a film formation apparatus that suppresses effects of pre-processing and enables stable film formation is provided. A film formation apparatus of the present disclosure includes a chamber that can be made vacuum, a transporter that is provided inside the chamber and that circulates and transports a workpiece in a trajectory of a circle, a film formation unit that forms film by sputtering on the workpiece circulated and transported by the transporter, a load-lock room that loads the workpiece into and out of the chamber relative to air space while keeping an interior of the chamber vacuum, and a pre-processing unit that is provided in the chamber at a position adjacent to the load-lock room and that performs pre-processing to the workpiece loaded in from the load-lock room in a state distant from the transporter.