利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

12 条记录 (耗时 0.015 秒)

    Apparatus and method for analyzing chemical state of battery material
    4.
    发明授权
    Apparatus and method for analyzing chemical state of battery material 有权

    公开(公告)号：US11378530B2

    公开(公告)日：2022-07-05

    申请号：US16971518

    申请日：2018-02-21

    申请人： Shimadzu Corporation

    发明人： Kenji Sato ,  Satoshi Tokuda ,  Takuro Izumi ,  Tetsuya Yoneda ,  Susumu Adachi

    IPC分类号： G01N23/223 ,  G01N23/207 ,  G01N23/2209 ,  G01N23/2252

    摘要： A chemical state analysis apparatus 10 includes: an excitation source 11 configured to irradiate an irradiation region A of a predetermined surface in a sample S containing a battery material with an excitation rays for generating characteristic X-rays of the battery material; an analyzing crystal 13 of a flat plate arranged so as to face the irradiation region A; a slit 12 arranged between the irradiation region A and the analyzing crystal 13, the slit being arranged in parallel to the irradiation region A and a predetermined crystal plane of the analyzing crystal 13; an X-ray linear sensor 15 in which linear detecting elements 151 each having a length in a direction parallel to the slit 12 are arranged in a direction perpendicular to the slit; a wavelength spectrum generation unit 161 configured to generate a wavelength spectrum based on intensity of the characteristic X-rays detected by the X-ray linear sensor 15; a peak wavelength determination unit 162 configured to determine a peak wavelength which is a wavelength in a peak of the wavelength spectrum; and a chemical state specification unit 163 configured to specify a value for specifying a chemical state of the battery material in the sample S from the peak wavelength determined by the peak wavelength determination unit 162 and a standard curve representing a relation between a value representing the chemical state and the peak wavelength.

    Semiconductor detector
    5.
    发明授权
    Semiconductor detector 有权

    公开(公告)号：US10254417B2

    公开(公告)日：2019-04-09

    申请号：US15776809

    申请日：2015-11-19

    申请人： Shimadzu Corporation

    发明人： Satoshi Tokuda ,  Toshinori Yoshimuta ,  Hiroyuki Kishihara ,  Yukihisa Wada

    IPC分类号： G01T1/24 ,  G01T1/20 ,  G01T7/00 ,  H01L27/146 ,  H01L31/108

    摘要： In a radiation detector, a Schottky electrode is formed such that an interdiffusion coefficient between the material of an outermost surface electrode formed on the Schottky electrode and the material of the Schottky electrode is smaller than an interdiffusion coefficient between the material of the outermost surface electrode and Al (aluminum). Consequently, the material of the outermost surface electrode does not diffuse into the Schottky electrode, and Schottky functions can be maintained, and at the same time, the material of the Schottky electrode does not diffuse into the outermost surface electrode, and the outermost surface electrode can be prevented from alloying.

    X-ray imaging apparatus
    7.
    发明授权
    X-ray imaging apparatus 有权

    公开(公告)号：US11166687B2

    公开(公告)日：2021-11-09

    申请号：US16955312

    申请日：2018-11-08

    申请人： Shimadzu Corporation

    发明人： Koichi Tanabe ,  Yukihisa Wada ,  Satoshi Tokuda ,  Satoshi Sano ,  Akira Horiba

    IPC分类号： A61B6/00 ,  A61B6/10

    摘要： In an X-ray imaging apparatus an image processor is configured to generate a phase contrast image based on a plurality of first images acquired by a first detection region (R1) at a plurality of relative positions of the first detection region with respect to a subject (T) to be imaged, and to generate an absorption image based on a plurality of second images acquired by a second detection region (R2) at a plurality of relative positions of the second detection region with respect to the subject.

    Semiconductor device and semiconductor detector, methods for manufacturing same, and semiconductor chip or substrate
    8.
    发明授权
    Semiconductor device and semiconductor detector, methods for manufacturing same, and semiconductor chip or substrate 有权

    公开(公告)号：US10468365B2

    公开(公告)日：2019-11-05

    申请号：US15775538

    申请日：2015-11-12

    申请人： Shimadzu Corporation ,  TOHOKU-MICROTEC CO., LTD.

    发明人： Hiroyuki Kishihara ,  Toshinori Yoshimuta ,  Satoshi Tokuda ,  Yukihisa Wada ,  Makoto Motoyoshi

    IPC分类号： H01L23/00 ,  H01L27/146

    摘要： In a method for manufacturing a radiation detector, counter pixel electrodes 33 are formed on a counter substrate 2 at positions facing a plurality of pixel electrodes formed on a signal reading substrate, and wall bump electrodes 34 are further formed on the counter pixel electrodes 33. In order to achieve the above, a resist R is applied, and the resist R is exposed to light to form openings O. When Au sputter deposition is performed on the openings O, only some of the Au is deposited on the bottom surface in the openings O as the counter pixel electrodes 33. The rest of the Au is not deposited on the bottom surface in the openings O, and the most of the remaining Au adheres to the inner walls of the openings O to form wall bump electrodes 34. The bump electrodes 34 are cylindrical, making it possible to reduce the pressure acting on the signal reading substrate by an extent corresponding to the decrease in the bonding area in comparison to conventional bump-shaped bump electrodes. The decrease in the bonding area also makes it possible to correspondingly improve the reproducibility of forming the diameter of the electrodes, and make reliable connection possible.

    Dispersive element
    9.
    发明授权
    Dispersive element 有权

    公开(公告)号：US11763957B2

    公开(公告)日：2023-09-19

    申请号：US17610640

    申请日：2019-07-18

    申请人： SHIMADZU CORPORATION

    发明人： Takuro Izumi ,  Satoshi Tokuda ,  Susumu Adachi ,  Tetsuya Yoneda

    IPC分类号： G01K1/06 ,  G21K1/06

    CPC分类号： G21K1/06

    摘要： A dispersive element is provided with a dispersive crystal for spectrally dispersing X-rays, a first support layer supporting the dispersive crystal, and a second support layer supporting the first support layer. The first support layer is greater in a thermal expansion coefficient than the dispersive crystal. The second support layer is smaller in a thermal expansion coefficient than the first support layer and is greater in rigidity than the first support layer.