摘要:
A dispersive element is provided with a dispersive crystal for spectrally dispersing X-rays, a first support layer supporting the dispersive crystal, and a second support layer supporting the first support layer. The first support layer is greater in a thermal expansion coefficient than the dispersive crystal. The second support layer is smaller in a thermal expansion coefficient than the first support layer and is greater in rigidity than the first support layer.
摘要:
Provided is a radiation imaging apparatus capable of performing precise imaging without performing pre-imaging in the absence of a subject. According to the present invention, it is possible to provide a radiation imaging apparatus capable of performing precise imaging without performing pre-imaging in the absence of a subject immediately before. That is, the apparatus of the present invention is provided with a phase grating 5 provided with a subject area and a reference area. Both areas each have a predetermined pattern that absorbs radiation, but the patterns are different from each other. In this area, an image of the phase grating 5 is observed in a moire pattern of a long period. This moire image of a long period changes in the positions due to the minute change in the relative position between the phase grating 5 and the absorption grating 6, so it becomes possible to detect the minute change of the relative position between the radiation source, the phase grating 5, and the absorption grating 6 from the image of the reference area.
摘要:
This X-ray phase contrast imaging apparatus (100) includes an X-ray source (1) that radiates continuous X-rays, a first grating (3) that forms a self-image, a second grating (4), a detector (5) that detects the continuous X-rays, and a third grating (2) arranged between the detector (5) and the first grating 3. The first grating (3), the second grating (4), and the third grating (2) are arranged so as to satisfy conditions of predetermined formulas.
摘要:
An X-ray phase contrast imaging device of the present invention can change an arrangement pitch of slits related to a multi-slit and an arrangement pitch of phase shift sections related to a phase grating. A positional relationship among the multi-slit 3b, the phase grating, and an FPD is determined based on the arrangement pitch of the slits related to the multi-slit, the arrangement pitch of the phase shift sections related to the phase grating, and an arrangement pitch of detection elements related to the FPD. Among these arrangement pitches, by changing the arrangement pitch of the slits and the arrangement pitch of the phase shift sections, the present invention can change the positional relationship among the multi-slit, the phase grating, and the FPD.
摘要:
A spectroscopic element and a detector are disposed along a circumference of one Rowland circle. The spectroscopic element has a spectral surface whose length, measured along the Rowland circle, is shorter than a length in the Rowland circle plane, of an irradiation surface irradiated with excitation beams emitted to a sample holder. The spectroscopic element and the sample holder are disposed to separate a group of characteristic X-rays within a common spectral range of the spectroscopic element.
摘要:
An X-ray spectrometer is provided with: an excitation source configured to irradiate excitation rays onto an irradiation area of a sample, a diffraction member provided to face the irradiation area; a slit member provided between the irradiation area and the diffraction member, the slit member having a slit extending parallel to the irradiation area and a prescribed surface of the diffraction member; an X-ray linear sensor having a light-incident surface in which a plurality of detection elements are arranged in a direction perpendicular to a longitudinal direction of the slit; a first moving mechanism configured to change an angle between the sample surface and the prescribed surface, and/or a distance between the sample surface and the prescribed surface by moving the diffraction member within a plane perpendicular to the longitudinal direction; and a second moving mechanism configured to position the X-ray linear sensor on a path of characteristic X-rays passed through the slit and diffracted by the prescribed surface by moving the X-ray linear sensor within a plane perpendicular to the longitudinal direction.
摘要:
A chemical state analysis apparatus 10 includes: an excitation source 11 configured to irradiate an irradiation region A of a predetermined surface in a sample S containing a battery material with an excitation rays for generating characteristic X-rays of the battery material; an analyzing crystal 13 of a flat plate arranged so as to face the irradiation region A; a slit 12 arranged between the irradiation region A and the analyzing crystal 13, the slit being arranged in parallel to the irradiation region A and a predetermined crystal plane of the analyzing crystal 13; an X-ray linear sensor 15 in which linear detecting elements 151 each having a length in a direction parallel to the slit 12 are arranged in a direction perpendicular to the slit; a wavelength spectrum generation unit 161 configured to generate a wavelength spectrum based on intensity of the characteristic X-rays detected by the X-ray linear sensor 15; a peak wavelength determination unit 162 configured to determine a peak wavelength which is a wavelength in a peak of the wavelength spectrum; and a chemical state specification unit 163 configured to specify a value for specifying a chemical state of the battery material in the sample S from the peak wavelength determined by the peak wavelength determination unit 162 and a standard curve representing a relation between a value representing the chemical state and the peak wavelength.
摘要:
A metal including a passivation film 33a with a thickness of 10 nm or more is used as a metal electrode (a focus cup electrode 33) for generating an electric filed in a vacuum. The focus cup electrode 33 is made of stainless steel. The stainless steel is immersed in a treatment solution to perform coating (passivation treatment) . Accordingly, the passivation film 33a can be formed to be thicker than 10 nm. In this manner, the passivation film 33a is thicker than 10 nm. Therefore, the surface is uniform, and the adhesion is excellent, and the number of pinholes is small. Accordingly, the withstand voltage performance can be improved.