公开(公告)号：US20250053089A1

公开(公告)日：2025-02-13

申请号：US18797818

申请日：2024-08-08

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Keiichi Masunaga ,  Satoshi Watanabe ,  Masahiro Fukushima ,  Masaaki Kotake ,  Yuta Matsuzawa ,  Tatsumi Sueyoshi

IPC: G03F7/039 ,  C08F212/14

Abstract: A resist composition comprising a base polymer, a photoacid generator, and a quencher is provided. The base polymer contains a polymer comprising phenolic hydroxy-containing units, aromatic ring-containing units, and units containing a phenolic hydroxy group protected with an acid labile group. A resist film is processed into a pattern of satisfactory profile exhibiting a high resolution, reduced LER, and rectangularity while the influence of residue defects is restrained.

公开(公告)号：US12216401B2

公开(公告)日：2025-02-04

申请号：US17487201

申请日：2021-09-28

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masahiro Fukushima ,  Kazuhiro Katayama

IPC: G03F7/004 ,  C07C309/12 ,  C07C381/12 ,  C07D307/93 ,  C08F220/22 ,  C08F220/24 ,  C08F220/38 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30

Abstract: A sulfonium salt having formula (1) is novel. A chemically amplified resist composition comprising the sulfonium salt as a PAG has advantages including solvent solubility and improved lithography properties such as EL and LWR when processed by photolithography using high-energy radiation such as KrF or ArF excimer laser, EB or EUV.

公开(公告)号：US20250004371A1

公开(公告)日：2025-01-02

申请号：US18737106

申请日：2024-06-07

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masahiro Fukushima ,  Satoshi Watanabe ,  Kenji Funatsu ,  Keiichi Masunaga ,  Masaaki Kotake ,  Yuta Matsuzawa

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32

Abstract: A chemically amplified positive resist composition is provided comprising a polymer comprising repeat units having a phenolic hydroxy group protected with a tertiary ether type acid labile group and an acid generator capable of generating a fluorinated aromatic sulfonic acid. A resist pattern with a high resolution, reduced LER, rectangularity, minimized influence of develop loading, and few development residue defects can be formed.

公开(公告)号：US20240377741A1

公开(公告)日：2024-11-14

申请号：US18650997

申请日：2024-04-30

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Keiichi Masunaga ,  Satoshi Watanabe ,  Masahiro Fukushima ,  Masaaki Kotake ,  Yuta Matsuzawa

IPC: G03F7/039 ,  G03F1/20 ,  G03F1/22 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32

Abstract: A chemically amplified positive resist composition is provided comprising (A) a quencher containing an onium salt having a nitrogen-containing aliphatic heterocycle and a fluorocarboxylic acid structure in its anion and (B) a base polymer containing a specific polymer which is decomposed under the action of acid to increase its solubility in alkaline developer. The resist composition exhibits a high resolution during pattern formation and forms a pattern of rectangular profile with improved LER, fidelity and dose margin.

公开(公告)号：US20240361688A1

公开(公告)日：2024-10-31

申请号：US18626972

申请日：2024-04-04

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masahiro Fukushima

IPC: G03F7/004 ,  C07C25/18 ,  C07C211/63 ,  C07C381/12 ,  C07D207/16 ,  C07D211/46 ,  C07D211/54 ,  C07D211/62 ,  C07D221/14 ,  C07D327/08 ,  C07D333/76 ,  C07D405/12

CPC classification number: G03F7/0045 ,  C07C25/18 ,  C07C211/63 ,  C07C381/12 ,  C07D207/16 ,  C07D211/46 ,  C07D211/54 ,  C07D211/62 ,  C07D221/14 ,  C07D327/08 ,  C07D333/76 ,  C07D405/12

Abstract: A chemically amplified resist composition is provided which is excellent in LWR and resolution and can prevent a resist pattern from collapsing in far ultraviolet lithography and EUV lithography, an onium salt for use therein, and a pattern forming process using the resist composition. The chemically amplified resist composition includes an onium salt having the following formula (1).

公开(公告)号：US20240184200A1

公开(公告)日：2024-06-06

申请号：US18383101

申请日：2023-10-24

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Tomomi Watanabe ,  Masahiro Fukushima

IPC: G03F7/004 ,  C07C219/14 ,  C07D295/088 ,  C08F212/14 ,  C08F220/18 ,  C08F220/28 ,  G03F7/038 ,  G03F7/039

CPC classification number: G03F7/0045 ,  C07C219/14 ,  C07D295/088 ,  C08F212/24 ,  C08F220/1806 ,  C08F220/1808 ,  C08F220/1809 ,  C08F220/1818 ,  C08F220/283 ,  G03F7/0382 ,  G03F7/0392 ,  C07C2601/08 ,  C07C2601/14

Abstract: A chemically amplified resist composition comprising a quencher in the form of an amine compound of specific structure is provided. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

公开(公告)号：US20240176236A1

公开(公告)日：2024-05-30

申请号：US18376925

申请日：2023-10-05

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masahiro Fukushima

IPC: G03F7/004 ,  C07C25/18 ,  C07C309/12 ,  C07C381/12 ,  C07D327/08 ,  C07D333/54 ,  C07D333/76 ,  G03F7/038 ,  G03F7/039

CPC classification number: G03F7/0045 ,  C07C25/18 ,  C07C309/12 ,  C07C381/12 ,  C07D327/08 ,  C07D333/54 ,  C07D333/76 ,  G03F7/0382 ,  G03F7/0392 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2603/68 ,  C07C2603/86

Abstract: An onium salt having formula (1) is provided. A chemically amplified resist composition comprising the onium salt as a PAG has advantages including high solvent solubility, high sensitivity, a high contrast, and improved lithography properties such as EL and LWR when processed by photolithography using high-energy radiation.

公开(公告)号：US20240126168A1

公开(公告)日：2024-04-18

申请号：US18367157

申请日：2023-09-12

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masahiro Fukushima ,  Jun Hatakeyama ,  Masaki Ohashi

IPC: G03F7/029 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20

CPC classification number: G03F7/029 ,  G03F7/0045 ,  G03F7/0048 ,  G03F7/0397 ,  G03F7/2004

Abstract: An onium salt type monomer having the following formula (a1) or (a2).

公开(公告)号：US11953827B2

公开(公告)日：2024-04-09

申请号：US16858092

申请日：2020-04-24

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masahiro Fukushima ,  Masaki Ohashi ,  Kazuhiro Katayama

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30

CPC classification number: G03F7/004 ,  G03F7/162 ,  G03F7/20 ,  G03F7/30

Abstract: A molecular resist composition is provided comprising (A) a betaine type onium compound having a sulfonium cation moiety and a sulfonate anion moiety in a common molecule, the sulfonium cation moiety having a phenyl group substituted with an optionally heteroatom-containing monovalent hydrocarbon group, the phenyl group being attached to the sulfur atom, and (B) an organic solvent, the resist composition being free of a base resin. When processed by lithography using KrF, ArF excimer laser, EB or EUV, the resist composition is improved in dissolution contrast, EL, MEF, and LWR.

公开(公告)号：US20230393470A1

公开(公告)日：2023-12-07

申请号：US18200874

申请日：2023-05-23

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Keiichi Masunaga ,  Masahiro Fukushima ,  Masaaki Kotake ,  Satoshi Watanabe

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/32 ,  G03F7/20

CPC classification number: G03F7/0382 ,  G03F7/0045 ,  G03F7/322 ,  G03F7/2004

Abstract: A chemically amplified negative resist composition is provided comprising (A) a quencher in the form of a sulfonium salt of carboxylic acid having a nitrogen-bearing heterocycle and (B) a base polymer containing a specific polymer. The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER, fidelity and dose margin.