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公开(公告)号:US20220276557A1
公开(公告)日:2022-09-01
申请号:US17591719
申请日:2022-02-03
摘要: A chemically amplified negative resist composition comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1) is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER or LWR.
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公开(公告)号:US20220269174A1
公开(公告)日:2022-08-25
申请号:US17591741
申请日:2022-02-03
摘要: A chemically amplified positive resist composition is provided comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or Selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1). The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER and CDU.
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3.
公开(公告)号:US11548844B2
公开(公告)日:2023-01-10
申请号:US16417909
申请日:2019-05-21
发明人: Daisuke Domon , Masayoshi Sagehashi , Masaaki Kotake , Naoya Inoue , Keiichi Masunaga , Satoshi Watanabe
IPC分类号: G03F7/038 , G03F7/20 , G03F7/16 , G03F7/32 , G03F7/38 , G03F1/20 , G03F1/22 , C07C33/30 , C07C69/54 , C08F220/30 , G03F1/60 , C08F212/14 , C08F220/28
摘要: A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.
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公开(公告)号:US10416558B2
公开(公告)日:2019-09-17
申请号:US15656203
申请日:2017-07-21
摘要: A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of specific structure has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.
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公开(公告)号:US20180039177A1
公开(公告)日:2018-02-08
申请号:US15656203
申请日:2017-07-21
CPC分类号: G03F7/0392 , C07C381/12 , G03F1/76 , G03F7/0045 , G03F7/0046 , G03F7/0048 , G03F7/0395 , G03F7/0397 , G03F7/162 , G03F7/168 , G03F7/2037 , G03F7/322 , G03F7/38
摘要: A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of specific structure has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.
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公开(公告)号:US20180039175A1
公开(公告)日:2018-02-08
申请号:US15666757
申请日:2017-08-02
CPC分类号: G03F7/0045 , C07C69/753 , C07C303/32 , C07C309/04 , C07C309/06 , C07C309/17 , C07C309/19 , C07C309/23 , C07C309/24 , C07C309/29 , C07C309/30 , C07C309/31 , C07C309/32 , C07C309/35 , C07C309/44 , C07C309/58 , C08F212/02 , C08F220/22 , C08F220/24 , C08F220/30 , C08F220/38 , C08F222/10 , C08F224/00 , C08F228/02 , C08F2220/283 , C08F2220/303 , C08F2220/382 , G03F7/0046 , G03F7/0382 , G03F7/162 , G03F7/168 , G03F7/2006 , G03F7/2037 , G03F7/322 , G03F7/38
摘要: A negative resist composition comprising (A) a sulfonium compound of betaine type and (B) a polymer is provided. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.
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公开(公告)号:US11131926B2
公开(公告)日:2021-09-28
申请号:US16012124
申请日:2018-06-19
IPC分类号: G03F7/039 , G03F7/004 , G03F7/038 , C07C309/42 , C07C309/25 , C07C309/29 , C07C309/35 , C07C309/38 , C07C309/44 , C07C309/59 , C07C323/66 , C07C309/39
摘要: The present invention provides a resist composition, including: (A) a sulfonium salt containing an anion and a cation, the cation including a partial structure shown by the following general formula (A1); and (B) a polymer compound containing a repeating unit shown by the following general formula (B1). The present invention provides a resist composition that causes few defects and is excellent in lithography performance, having regulated acid diffusion, in photolithography using a high energy beam as a light source, and a resist patterning process using this resist composition.
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公开(公告)号:US10725377B2
公开(公告)日:2020-07-28
申请号:US15854990
申请日:2017-12-27
IPC分类号: G03F7/038 , G03F7/004 , G03F7/30 , C07C381/12 , C07C317/04 , C07C317/28 , C07C303/32 , C07C323/20 , C08F212/14 , G03F7/32 , G03F7/20 , G03F7/039
摘要: A negative resist composition comprising a sulfonium compound having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER.
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公开(公告)号:US10120279B2
公开(公告)日:2018-11-06
申请号:US15666757
申请日:2017-08-02
IPC分类号: G03F7/004 , G03F7/38 , G03F7/20 , C07C303/32 , C07C309/01 , C07C309/06 , C07C309/09 , C07C309/17 , C07C309/19 , C07C309/23 , C07C309/24 , C07C69/63 , C08F212/02 , C08F220/22 , C08F220/24 , C08F220/38 , C08F224/00 , C08F228/02 , G03F7/038 , G03F7/32 , C07C309/04 , C07C309/31 , C07C309/30 , C07C309/29 , C07C309/58 , C07C309/35 , C07C309/44 , C07C69/753 , C07C309/32 , C08F222/10 , C08F220/30 , G03F7/16 , C08F220/28
摘要: A negative resist composition comprising (A) a sulfonium compound of betaine type and (B) a polymer is provided. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.
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10.
公开(公告)号:US09740098B2
公开(公告)日:2017-08-22
申请号:US15094348
申请日:2016-04-08
CPC分类号: G03F7/0045 , G03F1/20 , G03F1/22 , G03F7/0046 , G03F7/0382 , G03F7/09 , G03F7/2059 , G03F7/30 , G03F7/322
摘要: A chemically amplified negative resist composition is defined as comprising (A) an onium salt having an anion moiety which is a nitrogen-containing carboxylate of fused ring structure, (B) a base resin, and (C) a crosslinker. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.
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