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公开(公告)号：US20230152696A1
公开(公告)日：2023-05-18
申请号：US17986233
申请日：2022-11-14
发明人： Jun Hatakeyama , Kousuke Ohyama , Shun Kikuchi
IPC分类号： G03F7/039 , C08F220/18 , C08F212/14 , C08F220/22 , C08F220/36
CPC分类号： G03F7/039 , C08F220/1806 , C08F212/24 , C08F220/22 , C08F220/1807 , C08F220/1811 , C08F220/36 , C08F220/1808
摘要： A positive resist composition is provided comprising a base polymer end-capped with a sulfonium salt containing a carboxylate anion having a sulfide group linked thereto. Because of controlled acid diffusion, a resist film of the composition forms a pattern of good profile with a high resolution and reduced edge roughness or dimensional variation.
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公开(公告)号：US20220100089A1
公开(公告)日：2022-03-31
申请号：US17484333
申请日：2021-09-24
IPC分类号： G03F7/004 , C07C381/12 , C07C309/71 , C07C59/84
摘要： A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography.
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公开(公告)号：US20240272550A1
公开(公告)日：2024-08-15
申请号：US18539887
申请日：2023-12-14
CPC分类号： G03F7/0295 , G03F7/0048 , G03F7/039 , G03F7/322
摘要： A resist composition is provided that comprises a hypervalent iodine compound having the formula (1), a carboxy group-containing polymer, and a solvent. In formula (1), n is an integer of 0 to 5, R1 and R2 are each independently halogen or a C1-C10 hydrocarbyl group which may contain a heteroatom, R1 and R2 may bond together to form a ring with the carbon atoms to which they are attached and the intervenient atoms. R3 is halogen or a C1-C40 hydrocarbyl group which may contain a heteroatom.
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公开(公告)号：US20230367211A1
公开(公告)日：2023-11-16
申请号：US18143216
申请日：2023-05-04
发明人： Masaki Ohashi , Shun Kikuchi , Seiichiro Tachibana
CPC分类号： G03F7/027 , G03F7/2004 , G03F7/325
摘要： A resist composition comprising a hypervalent iodine compound having at least two acyloxy groups, a carboxylic acid, and a solvent is provided. When processed by lithography using high-energy radiation, the resist composition exhibits a high sensitivity and resolution.
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公开(公告)号：US20230132653A1
公开(公告)日：2023-05-04
申请号：US17978481
申请日：2022-11-01
摘要： A molecular resist composition comprising a sulfonium salt having formula (1) or (2) and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography.
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公开(公告)号：US20220107559A1
公开(公告)日：2022-04-07
申请号：US17484343
申请日：2021-09-24
发明人： Jun Hatakeyama , Takeshi Nagata , Chuanwen Lin , Shun Kikuchi
IPC分类号： G03F7/004 , G03F7/039 , C07C381/12 , C07C309/12 , C07D307/00 , C07D333/76 , C07D327/08 , C07J31/00 , C07D327/04
摘要： A positive resist composition is provided comprising (A) an acid generator in the form of a sulfonium salt consisting of a fluorine-containing sulfonate anion and a fluorine-containing sulfonium cation, (B) a quencher in the form of a sulfonium salt containing at least two fluorine atoms in its cation or containing at least 5 fluorine atoms in its anion and cation, and (C) a base polymer comprising repeat units (a1) having a carboxy group whose hydrogen is substituted by an acid labile group and/or repeat units (a2) having a phenolic hydroxy group whose hydrogen is substituted by an acid labile group. The resist composition exhibits a high sensitivity, high resolution and improved LWR or CDU.
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公开(公告)号：US20240345480A1
公开(公告)日：2024-10-17
申请号：US18625950
申请日：2024-04-03
摘要： The negative-tone molecular resist composition comprises an onium salt containing a cation having a cyclic ether site and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR when processed by photolithography using high-energy radiation. The molecular resist composition of the invention meets both high sensitivity and high resolution and is improved in LWR when processed by photolithography using high-energy radiation, especially EB or EUV lithography. The resist composition is quite useful for precise micropatterning.
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8.发明公开公开(公告)号：US20240319598A1
公开(公告)日：2024-09-26
申请号：US18594575
申请日：2024-03-04
发明人： Takehiro SATO , Shun Kikuchi , Ryo Mitsui , Seiichiro Tachibana
CPC分类号： G03F7/0758 , G03F7/094 , G03F7/167 , G03F7/2016 , G03F7/2037
摘要： The present invention is a composition for forming a silicon-containing resist underlayer film, containing a condensation reaction-type thermosetting silicon-containing material (Sx), being a polysiloxane resin, where the material has a non-condensation reactive organic group that reacts with a radical chemical species, the resin includes more than 0 and 70 mol % or less of one or more of a repeating unit represented by the following general formula (Sx-4) and a repeating unit represented by the general formula (Sx-5), and the organic group remains unreacted after a heat-curing reaction of the polysiloxane resin. This provides: a composition for forming a resist underlayer film containing a thermosetting silicon-containing material in photolithography using a high-energy beam, the material improving sensitivity, LWR, and resolution of an upper layer resist and further contributing to the prevention of pattern collapse; and a patterning process using the composition for forming a resist underlayer film.
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公开(公告)号：US11940728B2
公开(公告)日：2024-03-26
申请号：US17484333
申请日：2021-09-24
IPC分类号： G03F7/004 , C07C59/84 , C07C309/71 , C07C381/12
CPC分类号： G03F7/0045 , C07C59/84 , C07C309/71 , C07C381/12 , C07C2601/14
摘要： A molecular resist composition and a pattern forming process. A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography. The molecular resist composition does not contain a base polymer. The molecular resist composition comprising a sulfonium salt having a cation of specific partial structure has a high sensitivity and forms a resist film with improved resolution and LWR, so that the resist composition is quite useful for precise micropatterning.
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公开(公告)号：US20230161255A1
公开(公告)日：2023-05-25
申请号：US17988110
申请日：2022-11-16
发明人： Jun Hatakeyama , Shun Kikuchi , Kousuke Ohyama
CPC分类号： G03F7/0392 , G03F7/2006
摘要： A positive resist composition is provided comprising a base polymer end-capped with an ammonium salt of an iodized acid, linked to a sulfide group. Because of controlled acid diffusion, a resist film of the composition forms a pattern of good profile with a high resolution and reduced edge roughness or dimensional variation.
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