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公开(公告)号：US20240142390A1
公开(公告)日：2024-05-02
申请号：US18280825
申请日：2022-02-25
发明人： Yutaka SHIGA , Toru TAKAHASHI , Hisao MURAKI
CPC分类号： G01N21/9505 , C30B29/36 , C30B33/10 , H01L22/12
摘要： A method for evaluating crystal defects in a silicon carbide single crystal wafer, the method including steps of: etching a silicon carbide single crystal wafer with melted KOH so that a size of an etch pit due to a threading edge dislocation is 10 to 50 μm; obtaining microscopic images by automatic photographing at a plurality of positions on a surface of the silicon carbide single crystal wafer after the etching; determining presence or absence of a defect dense part in each of all the obtained microscopic images based on a continued length of the etch pit formed by the etching; and classifying all the obtained microscopic images into microscopic images having the defect dense part and microscopic images not having the defect dense part to evaluate a dense state of crystal defects in the silicon carbide single crystal wafer.
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公开(公告)号：US20210262119A1
公开(公告)日：2021-08-26
申请号：US17253685
申请日：2019-05-29
发明人： Hitoshi IKEDA , Yuichi MATSUMOTO , Toru TAKAHASHI
摘要： A silicon carbide single crystal growth apparatus including: a growth container including a growth container lid to which a seed crystal substrate is adhered and a growth container body for containing seed crystal substrate and a silicon carbide raw material; a heat-insulating container surrounding growth container; a temperature measuring equipment measuring a temperature inside growth container through a hole for temperature measurement provided in the heat-insulating container; and a heater heating the silicon carbide raw material, where a silicon carbide single crystal is grown on seed crystal substrate by heating and subliming silicon carbide raw material by a sublimation method, where growth container lid has a pattern that penetrates the growth container lid formed only within an adhesion region of the seed crystal substrate on the growth container lid. This provides an apparatus and manufacturing method that can suppress the generation of threading screw, basal plane, and threading edge dislocation.
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公开(公告)号：US20210047748A1
公开(公告)日：2021-02-18
申请号：US16978813
申请日：2019-02-14
发明人： Hitoshi IKEDA , Yuichi MATSUMOTO , Toru TAKAHASHI
摘要： A method for manufacturing a silicon carbide single crystal sublimates a solid silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate. The method includes: mixing a tantalum (Ta) powder with a carbon powder; attaching the mixture to the solid silicon carbide raw material in the growth container; and heating the resultant for sintering to form a tantalum carbide (TaC) coating film on a surface of the solid silicon carbide raw material. A silicon carbide single crystal is grown after or while the coating film is formed. Thereby, the method for manufacturing a silicon carbide single crystal has few carbon inclusions.
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公开(公告)号：US20200332436A1
公开(公告)日：2020-10-22
申请号：US16958762
申请日：2018-11-14
摘要： A method for manufacturing a SiC single crystal having a growth container surrounded by a heat-insulating material, a seed crystal substrate disposed inside a top at a center of the container, a silicon carbide raw material disposed at a bottom of the container to sublimate and grow a SiC crystal to allow a center of the hole to deviate from a center position of the seed substrate to a position on a periphery side, a SiC substrate having a main surface tilted from a {0001} plane wherein a basal plane is used and grown with the seed substrate so that a direction of a component of a normal vector of the basal plane of the seed substrate parallel to the main surface and an eccentric direction of the hole are opposite directions in a cross-sectional view including the center of the seed substrate and the center of the hole.
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公开(公告)号：US20210115593A1
公开(公告)日：2021-04-22
申请号：US16981343
申请日：2019-02-18
发明人： Hitoshi IKEDA , Toru TAKAHASHI , Tetsuro AOYAMA
摘要： A method for manufacturing a silicon carbide single crystal by sublimating a silicon carbide raw material to grow a silicon carbide single crystal on a seed crystal substrate in an apparatus for growing a silicon carbide single crystal, the apparatus including at least a growth container and a heat-insulating container that surrounds the growth container and has a hole for temperature measurement. The method includes: measuring a temperature of the growth container via the hole for temperature measurement when the silicon carbide single crystal is grown; and blocking the hole for temperature measurement with a blocking member when the silicon carbide single crystal is cooled after the growth of the silicon carbide single crystal is ended. Consequently, a method and apparatus for manufacturing a silicon carbide single crystal are provided to reduce breaking and cracking of the silicon carbide single crystal ingot and wafer.
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公开(公告)号：US20210010161A1
公开(公告)日：2021-01-14
申请号：US16980183
申请日：2019-02-18
摘要： A method for manufacturing a silicon carbide single crystal sublimates a silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate. The seed crystal substrate used is a substrate having a {0001} plane with an off angle of 1° or less as a surface to be placed on the growth container, and a convex-shaped end face of a grown ingot as a crystal growth surface. A diameter of the seed crystal substrate is 80% or more of an inner diameter of the growth container. Thereby, the method for manufacturing a silicon carbide single crystal enables high straight-body percentage and little formation of different polytypes even in growth with no off-angle control, i.e., the growth is directed onto a basal plane which is not inclined from a C-axis .
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公开(公告)号：US20210010157A1
公开(公告)日：2021-01-14
申请号：US16980144
申请日：2019-02-15
摘要： A method for manufacturing a SiC single crystal reducing crystallinity degradation at a wafer central portion wherein a growth container surrounds a heat-insulating material with a top temperature measurement hole, a seed crystal substrate at an upper portion inside the container, and a silicon carbide raw material at a lower portion of the container and sublimated to grow a SiC single crystal on the seed crystal substrate. A center position hole deviates from a center position of the seed crystal substrate and moves to the periphery side of the center of the seed crystal substrate. A SiC single crystal substrate surface is tilted by a {0001} plane and used as the seed crystal substrate. The SiC single crystal grows with the seed crystal substrate directed to a normal vector of the seed crystal substrate basal plane parallel to the main surface and identical to the hole in a cross-sectional view.
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