METHOD OF PRODUCING BORON TRICHLORIDE

    公开(公告)号:US20210230010A1

    公开(公告)日:2021-07-29

    申请号:US17054548

    申请日:2019-06-04

    Abstract: There is provided a method of producing boron trichloride, in which damage to a reaction container is inhibited. The method of producing boron trichloride includes performing reaction between chlorine gas in a gas containing the chlorine gas and particulate boron carbide (4) in a state in which the boron carbide (4) flows in the gas containing the chlorine gas.

    METHOD FOR PRODUCING BORON TRICHLORIDE
    3.
    发明申请

    公开(公告)号:US20190330069A1

    公开(公告)日:2019-10-31

    申请号:US16306227

    申请日:2017-05-30

    Abstract: Provided is a method for producing boron trichloride capable of efficiently producing boron trichloride by suppressing the generation of byproducts resulting from water by sufficiently removing water from a reaction system. The method for producing boron trichloride includes: a dehydration step of bringing a chlorine-containing gas which contains chlorine gas and has a water content of 1 ppm by volume or less into contact with boron carbide at a temperature lower than a generation starting temperature at which the generation of the boron trichloride starts by the reaction between the boron carbide and the chlorine gas, and allowing water in the boron carbide to react with the chlorine gas in the chlorine-containing gas to remove the water contained in the boron carbide; and a generation step of allowing the boron carbide dehydrated in the dehydration step to react with the chlorine gas to generate boron trichloride.

    METHOD FOR CLEANING SiC MONOCRYSTAL GROWTH FURNACE

    公开(公告)号:US20190003046A1

    公开(公告)日:2019-01-03

    申请号:US16065257

    申请日:2016-12-26

    Abstract: A method of cleaning a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C-SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis, the method including flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through the inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, wherein the mixed gas comprises at least 1 vol % but not more than 20 vol % of fluorine gas, and at least 80 vol % but not more than 99 vol % of an inert gas, and a temperature inside the SiC monocrystal growth furnace is from 200° C. to 500° C.

    METHOD OF PRODUCING BORON TRICHLORIDE

    公开(公告)号:US20210246040A1

    公开(公告)日:2021-08-12

    申请号:US17052844

    申请日:2019-06-04

    Abstract: There is provided a method of producing boron trichloride, in which boron trichloride with high purity can be produced in simple production steps, and blockage of a production line is inhibited. The method of producing boron trichloride includes: a metal chlorination step of bringing a gas containing chlorine gas into contact with raw boron carbide as boron carbide including, as an impurity, a metal other than boron, and allowing the metal to react with the chlorine gas in the gas containing the chlorine gas, to form a metal chloride and to obtain boron carbide containing the metal chloride; a removal step of removing the metal chloride from the boron carbide containing the metal chloride, obtained in the metal chlorination step; and a generation step of bringing a gas containing chlorine gas into contact with the boron carbide from which the metal chloride has been removed in the removal step, and allowing the boron carbide and the chlorine gas in the gas containing the chlorine gas to react with each other to generate boron trichloride.

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