公开(公告)号：US12049406B2

公开(公告)日：2024-07-30

申请号：US17054548

申请日：2019-06-04

Applicant: SHOWA DENKO K.K.

Inventor： Jun Dou ,  Saki Mouri ,  Hideyuki Kurihara

IPC: C01B35/06

CPC classification number: C01B35/061 ,  C01P2004/61

Abstract: There is provided a method of producing boron trichloride, in which damage to a reaction container is inhibited. The method of producing boron trichloride includes performing reaction between chlorine gas in a gas containing the chlorine gas and particulate boron carbide (4) in a state in which the boron carbide (4) flows in the gas containing the chlorine gas.

公开(公告)号：US11878912B2

公开(公告)日：2024-01-23

申请号：US17052844

申请日：2019-06-04

Applicant: SHOWA DENKO K.K.

Inventor： Saki Mouri ,  Hideyuki Kurihara

IPC: C01B35/06

CPC classification number: C01B35/061 ,  C01P2004/61 ,  C01P2006/82

Abstract: A method of producing boron trichloride, which includes: a metal chlorination step of bringing a gas containing chlorine gas into contact with raw boron carbide as boron carbide including, as an impurity, a metal other than boron, and allowing the metal to react with the chlorine gas in the gas containing the chlorine gas, to form a metal chloride and to obtain boron carbide containing the metal chloride; a removal step of removing the metal chloride from the boron carbide containing the metal chloride, obtained in the metal chlorination step; and a generation step of bringing a gas containing chlorine gas into contact with the boron carbide from which the metal chloride has been removed in the removal step, and allowing the boron carbide and the chlorine gas in the gas containing the chlorine gas to react with each other to generate boron trichloride.

公开(公告)号：US20240002243A1

公开(公告)日：2024-01-04

申请号：US18039469

申请日：2021-10-27

Applicant: PETROCHINA COMPANY LIMITED

Inventor： Tong LIU ,  Yuanyuan CAO ,  Yulong WANG ,  Libo WANG ,  Xianming XU ,  Hongping LI ,  Enhao SUN ,  Xiuhui WANG ,  Wei SUN ,  Han GAO ,  Hongling CHU ,  Yongjun ZHANG ,  Yonggang JI ,  Kecun MA ,  Yan JIANG ,  Qian CHEN ,  Hongliang HUO ,  Qi YU

IPC: C01B35/06 ,  B01D3/06 ,  B01D53/22 ,  B01D71/34 ,  B01D71/36

CPC classification number: C01B35/061 ,  B01D3/06 ,  B01D53/228 ,  B01D71/34 ,  B01D71/36 ,  C01B2210/0012 ,  B01D2311/10 ,  B01D2311/14

Abstract: The present invention provides a method for separation and recovery of boron trifluoride and complexes thereof in an olefin polymerization reaction. The method for separation and recovery of boron trifluoride and complexes thereof in an olefin polymerization reaction, comprising: 1) subjecting a mixture obtained after an olefin polymerization reaction to flash distillation separation to separate part of gaseous boron trifluoride; 2) subjecting the liquid phase obtained from the flash distillation separation to membrane separation to obtain complexes of boron trifluoride and a crude product of the olefin polymerization reaction; and 3) subjecting the crude product of the olefin polymerization reaction obtained in step 2) to gas stripping separation to separate the remaining gaseous boron trifluoride, so as to obtain a pure product of the olefin polymerization reaction The present invention designs a matching process based on the polymorphic characteristics of boron trifluoride and complexes thereof to achieve efficient separation of boron trifluoride and complexes thereof from polymerization intermediates.

公开(公告)号：US20210230010A1

公开(公告)日：2021-07-29

申请号：US17054548

申请日：2019-06-04

Applicant: SHOWA DENKO K.K.

Inventor： Jun DOU ,  Saki MOURI ,  Hideyuki KURIHARA

IPC: C01B35/06

Abstract: There is provided a method of producing boron trichloride, in which damage to a reaction container is inhibited. The method of producing boron trichloride includes performing reaction between chlorine gas in a gas containing the chlorine gas and particulate boron carbide (4) in a state in which the boron carbide (4) flows in the gas containing the chlorine gas.

公开(公告)号：US11050082B1

公开(公告)日：2021-06-29

申请号：US15717050

申请日：2017-09-27

Applicant: Government of the United States, as represented by the Secretary of the Air Force

Inventor： Stanley J. Rodrigues ,  Padmakar D. Kichambare

IPC: H01M10/0566 ,  H01M10/056 ,  H01M10/0569 ,  H01M10/0567 ,  H01M10/0563 ,  C01B13/00 ,  C01D15/00 ,  C01B35/06 ,  H01M10/0525

Abstract: A colloidal ionic-liquid electrolyte for electrochemical devices is provided. The colloidal ionic-liquid electrolyte includes a room temperature ionic-liquid, a lithium salt, and a ceramic particle phase (powder) including a high dielectric material dispersed in the ionic-liquid electrolyte, wherein the colloidal ionic-liquid electrolyte exhibits enhanced ionic conductivity in the electrochemical device compared to the ionic conductivity of the pure room temperature ionic-liquid. The high dielectric material exhibits a first dielectric constant of about 200 or more, and a first mean particle size of about 2000 nm or less. The enhanced ionic conductivity is observed in the temperature range of about 75° C. to about −60° C. and is more pronounced at colder temperatures. In addition, the colloidal ionic-liquid electrolyte exhibits enhanced non-flammability, enhanced mechanical stability, enhanced thermal stability and suppressed flowability.

公开(公告)号：US20200165139A1

公开(公告)日：2020-05-28

申请号：US16070286

申请日：2017-02-22

Applicant: XINJIANG TECHNICAL INSTITUTE OF PHYSICS & CHEMISTRY, CHINESE ACADEMY OF SCIENCES

Inventor： Shilie PAN ,  Guoqiang SHI ,  Fangfang ZHANG ,  Xueling HOU

IPC: C01B35/06 ,  C30B7/10 ,  C30B7/14 ,  C30B9/12 ,  C30B11/00 ,  C30B29/12 ,  G02F1/355 ,  G02F1/35 ,  G02F1/37 ,  G02F1/39

Abstract: A compound ammonium fluoroborate, a nonlinear optical crystal of ammonium fluoroborate, and a preparation method and use thereof; the compound has the chemical formula of NH4B4O6F with a molecular weight of 176.28, and is prepared by a solid phase reaction process; the crystal has the chemical formula of NH4B4O6F with a molecular weight of 176.28, belongs to the orthorhombic system, and has a space group of Pna21 and the following unit cell parameters: a=7.615(3) Å, b=11.207(4) Å, c=6.604(3) Å, Z=4, V=563.6 Å3. The nonlinear optical crystal can be obtained by the method of the present invention. The present invention provides uses of the nonlinear optical crystal in producing harmonic light and a deep-ultraviolet frequency-multiplied light below 200 nm; and in making a frequency multiplication generator, a frequency up or down converter or an optical parametric oscillator.

公开(公告)号：US20190330069A1

公开(公告)日：2019-10-31

申请号：US16306227

申请日：2017-05-30

Applicant: SHOWA DENKO K.K.

Inventor： Saki MOURI ,  Hideyuki KURIHARA

IPC: C01B35/06

Abstract: Provided is a method for producing boron trichloride capable of efficiently producing boron trichloride by suppressing the generation of byproducts resulting from water by sufficiently removing water from a reaction system. The method for producing boron trichloride includes: a dehydration step of bringing a chlorine-containing gas which contains chlorine gas and has a water content of 1 ppm by volume or less into contact with boron carbide at a temperature lower than a generation starting temperature at which the generation of the boron trichloride starts by the reaction between the boron carbide and the chlorine gas, and allowing water in the boron carbide to react with the chlorine gas in the chlorine-containing gas to remove the water contained in the boron carbide; and a generation step of allowing the boron carbide dehydrated in the dehydration step to react with the chlorine gas to generate boron trichloride.

公开(公告)号：US09764298B2

公开(公告)日：2017-09-19

申请号：US14940278

申请日：2015-11-13

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Edward E. Jones ,  Chiranjeevi Pydi ,  Joseph D. Sweeney

IPC: B01J8/00 ,  B01J8/02 ,  B01J8/04 ,  C01B35/00 ,  C01B35/06

CPC classification number: B01J8/0285 ,  B01J8/0465 ,  B01J2208/00017 ,  B01J2208/00389 ,  B01J2208/00433 ,  B01J2208/00539 ,  C01B35/061

Abstract: An apparatus is described, as including a reaction region for contacting a reactant gas with a reactive solid under conditions effective to form an intermediate product, and an opening for allowing an unreacted portion of the gaseous reagent and the intermediate product to exit the reaction region. The apparatus can be beneficially employed to form a final product as a reaction product of the intermediate product and the reactant gas. The reaction of the reactant gas and reactive solid can be conducted in a first reaction zone, with the reaction of the reactant gas and intermediate product conducted in a second reaction zone. In a specific implementation, the reaction of the reactant gas and intermediate product is reversible, and the reactant gas and intermediate product are flowed to the second reaction zone at a controlled rate or in a controlled manner, to suppress back reaction forming the reactive solid.

公开(公告)号：US09731968B2

公开(公告)日：2017-08-15

申请号：US13057587

申请日：2009-06-08

Applicant: Masahide Waki ,  Tatsuhiro Yabune ,  Kazuhiro Miyamoto ,  Kazutaka Hirano

Inventor： Masahide Waki ,  Tatsuhiro Yabune ,  Kazuhiro Miyamoto ,  Kazutaka Hirano

IPC: C01B35/06 ,  C01B33/107 ,  C01G17/04 ,  C01B25/10 ,  C01G28/00 ,  C01B9/08

CPC classification number: C01B9/08 ,  C01B33/10705 ,  C01B35/061 ,  C01B35/063 ,  C01G17/04 ,  C01G28/007

Abstract: Disclosed is a process for producing a fluoride gas that can produces fluoride gases such as BF3, SiF4, GeF4, PF5 or AsF5 at a reduced production cost in a simple manner. The process is characterized in that a compound containing an atom, which, together with a fluorine atom, can form a polyatomic ion, is added to a hydrogen fluoride solution to produce the polyatomic ion in a hydrogen fluoride solution and to evolve a fluoride gas comprising the fluorine atom and the atom that, together with the fluorine atom, can form a polyatomic ion.

公开(公告)号：US09502264B2

公开(公告)日：2016-11-22

申请号：US14827774

申请日：2015-08-17

Applicant: IMEC VZW

Inventor： Eddy Kunnen ,  Vasile Paraschiv

IPC: H01L21/302 ,  H01L21/311 ,  C01B35/06 ,  C09K13/00 ,  H01L21/768

CPC classification number: H01L21/31144 ,  C01B35/061 ,  C09K13/00 ,  H01L21/31116 ,  H01L21/76897

Abstract: A method for removing oxide selective to a material comprising at least silicon and at least nitrogen is disclosed, the method comprising providing in a reactor a structure having a surface comprising a region, wherein said region comprises a material comprising at least silicon and at least nitrogen, providing on said structure an oxide layer overlying at least a part of said region, and removing said oxide layer selective to said material by etching, thereby exposing at least a part of said at least overlaid part of said region, wherein said etching is done only by providing an etchant gas comprising boron, whereby a voltage bias lower than 30 V is applied to the structure.

Abstract translation: 公开了一种用于去除至少包含硅和至少氮的材料选择性的氧化物的方法，所述方法包括在反应器中提供具有包含区域的表面的结构，其中所述区域包括至少包含硅和至少氮 在所述结构上提供覆盖所述区域的至少一部分的氧化物层，以及通过蚀刻去除对所述材料选择性的所述氧化物层，从而暴露所述区域的所述至少覆盖部分的至少一部分，其中所述蚀刻完成 仅通过提供包含硼的蚀刻剂气体，由此将低于30V的电压偏压施加到该结构。