HEAT-ASSISTED MAGNETIC RECORDING MEDIUM AND MAGNETIC STORAGE APPARATUS

    公开(公告)号:US20200005821A1

    公开(公告)日:2020-01-02

    申请号:US16445801

    申请日:2019-06-19

    Abstract: A heat-assisted magnetic recording medium includes: a substrate; an underlayer; and a magnetic layer that is (001)-oriented. In the magnetic layer, a first magnetic layer and a second magnetic layer are stacked in this order from the underlayer side. The first magnetic layer and the second magnetic layer include an alloy having an L10 structure. The second magnetic layer includes a ferrite at grain boundaries of magnetic grains. The ferrite is one or more kinds selected from the group consisting of NiFe2O4, MgFe2O4, MnFe2O4, CuFe2O4, ZnFe2O3, CoFe2O4, BaFe2O4, SrFe2O4, and Fe3O4. A Curie temperature of the magnetic grains is lower than a Curie temperature of the ferrite.

    HEAT-ASSISTED MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING AND READING APPARATUS
    5.
    发明申请
    HEAT-ASSISTED MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING AND READING APPARATUS 有权
    热辅助磁记录介质和磁记录和读取装置

    公开(公告)号:US20130194901A1

    公开(公告)日:2013-08-01

    申请号:US13749934

    申请日:2013-01-25

    CPC classification number: G11B5/7325 G11B5/65

    Abstract: The heat-assisted magnetic recording medium of the present invention has a substrate, an under layer formed on the substrate, and a magnetic layer formed on the under layer, in which the magnetic layer includes an alloy having a L10 structure as a principle component, and the under layer is constituted by a first under layer made of an amorphous alloy or an alloy having a microcrystalline structure, a second under layer made of Cr or an alloy which contains Cr as a principle component and has a BCC structure, a third under layer made of a metal or an alloy having a BCC structure with a lattice constant of 2.98 Å or more, and a fourth under layer made of MgO.

    Abstract translation: 本发明的热辅助磁记录介质具有基板,形成在基板上的下层和形成在下层上的磁性层,其中磁性层包括具有L10结构的合金作为主要成分, 底层由非晶合金或具有微晶结构的合金制成的第一下层,由Cr制成的第二下层或含有Cr作为主要成分并具有BCC结构的合金构成,第三下面 具有晶格常数为2.98以上的BCC结构的金属或合金制成的层和由MgO构成的第四下层。

    MAGNETIC RECORDING MEDIUM AND MAGNETIC STORAGE APPARATUS

    公开(公告)号:US20180182423A1

    公开(公告)日:2018-06-28

    申请号:US15903492

    申请日:2018-02-23

    CPC classification number: G11B5/73 G11B5/7325

    Abstract: A magnetic recording medium includes a substrate, multiple underlayers formed on the substrate, and a magnetic layer foisted on the multiple underlayers. A main component of the magnetic layer is an alloy having a L10 structure. At least one of the multiple underlayers is a crystalline underlayer containing W. The W is a main component of the crystalline underlayer. The crystalline underlayer further contains 1 mol % or more to 20 mol % or less of one or more kinds of elements selected from B, Si, and C. A barrier layer including a material having a NaCl structure is formed between the crystalline underlayer and the magnetic layer.

    MAGNETIC RECORDING MEDIUM AND MAGNETIC STORAGE APPARATUS
    8.
    发明申请
    MAGNETIC RECORDING MEDIUM AND MAGNETIC STORAGE APPARATUS 有权
    磁记录介质和磁性储存装置

    公开(公告)号:US20150029830A1

    公开(公告)日:2015-01-29

    申请号:US14326555

    申请日:2014-07-09

    CPC classification number: G11B5/65 G11B5/7325 G11B2005/0021

    Abstract: A magnetic recording medium includes a substrate, a magnetic layer including an alloy having an L10 type crystal structure as a main component thereof, a plurality of underlayers arranged between the substrate and the magnetic layer, and a barrier layer made of a material having an NaCl structure. The plurality of underlayers include at least one crystalline underlayer including Mo as a main component thereof, and at least one of Si and C in a range of 1 mol % to 20 mol % and an oxide in a range of 1 vol % to 50 vol %. The barrier layer is provided between the magnetic layer and the at least one crystalline underlayer including Mo.

    Abstract translation: 磁记录介质包括基板,包括具有L10型晶体结构的合金作为其主要成分的磁性层,布置在基板和磁性层之间的多个底层,以及由具有NaCl的材料制成的阻挡层 结构体。 多个底层包括至少一种包含Mo作为其主要成分的晶体底层,以及Si和C中的至少一种在1mol%至20mol%的范围内,氧化物在1vol%至50vol %。 阻挡层设置在磁性层和包含Mo的至少一个结晶底层之间。

Patent Agency Ranking