公开(公告)号：US20190161886A1

公开(公告)日：2019-05-30

申请号：US16196212

申请日：2018-11-20

Applicant: SHOWA DENKO K.K.

Inventor： Yasunori MOTOYAMA ,  Yoshishige OKUNO ,  Yoshikazu UMETA ,  Keisuke FUKADA

IPC: C30B25/12 ,  C30B25/10 ,  C30B29/36 ,  C23C16/32 ,  C23C16/46 ,  C23C16/458

Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; and a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor, in which an unevenness is formed on a radiation-receiving surface of the susceptor, which faces a first surface of the heater provided at the susceptor side, and the unevenness is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view.

公开(公告)号：US20190161885A1

公开(公告)日：2019-05-30

申请号：US16196246

申请日：2018-11-20

Applicant: SHOWA DENKO K.K.

Inventor： Yasunori MOTOYAMA ,  Yoshishige OKUNO ,  Yoshikazu UMETA ,  Keisuke FUKADA

IPC: C30B25/10 ,  C23C16/46

Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view, in which the radiation member has a higher emissivity than that of the susceptor and has an exposed portion as viewed from the heater.