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1.发明公开公开(公告)号：US20240220843A1
公开(公告)日：2024-07-04
申请号：US18556941
申请日：2022-06-07
Applicant: SHOWA DENKO K.K.
Inventor： Suguru SAKAGUCHI , Yoshishige OKUNO
Abstract: An information processing system includes an annealing computing device, and a search device that converts a combinatorial optimization problem of a material composition asymptotically approaching a target physical property value into an Ising model and causes the computing device to solve the combinatorial optimization problem. The system receives a target value and a tolerable variation range of a physical property, converts a mathematical expression that formulates a combinatorial optimization problem of a material composition that asymptotically approaches the target value from a mixed material of materials having known physical property values, into the Ising model in a data format usable by the computing device, computes an optimum solution of the material composition asymptotically approaching the target value, using the Ising model, and excludes the materials included in the mixed material, from the material composition of the optimum solution computed, within the tolerable variation range, and outputs the material composition.
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公开(公告)号：US20200181797A1
公开(公告)日：2020-06-11
申请号：US16702905
申请日：2019-12-04
Applicant: SHOWA DENKO K.K.
Inventor： Rimpei KINDAICHI , Yoshishige OKUNO , Tomohiro SHONAI
Abstract: A crystal growing apparatus includes: a crucible which includes a main body portion, and a first portion having a radiation rate different from that of the main body portion, and is capable of controlling a temperature of a specific region inside during heating to a higher or lower temperature than that of the other regions; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the first portion is at a position where the crucible and a line segment connecting a heating center of the heating unit and the specific region intersect with each other.
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公开(公告)号：US20190161886A1
公开(公告)日：2019-05-30
申请号：US16196212
申请日：2018-11-20
Applicant: SHOWA DENKO K.K.
Inventor： Yasunori MOTOYAMA , Yoshishige OKUNO , Yoshikazu UMETA , Keisuke FUKADA
Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; and a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor, in which an unevenness is formed on a radiation-receiving surface of the susceptor, which faces a first surface of the heater provided at the susceptor side, and the unevenness is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view.
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公开(公告)号：US20220327675A1
公开(公告)日：2022-10-13
申请号：US17595608
申请日：2020-04-24
Applicant: SHOWA DENKO K.K.
Inventor： Yoshishige OKUNO , Eriko TAKEDA , Junichi SHIBUYA , Yuki NAKAO , Kenji OGAWA
Abstract: To improve a determination accuracy when determining each particle contained in an image of an object. An image analysis apparatus according to an embodiment of the present invention includes: a shape determination unit configured to determine a shape of a particle included in a particle image that is extracted from an image of an object, so that an OK particle image which is a particle image of an OK particle that satisfies a predetermined standard for shape and a provisional NG particle image which is a particle image of a provisional NG particle that does not satisfy the predetermined standard, are obtained; a pseudo image generation unit configured to generate a pseudo image; and a similarity determination unit configured to determine whether the provisional NG image and the pseudo image are similar.
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5.发明申请公开(公告)号：US20200010619A1
公开(公告)日：2020-01-09
申请号：US16489931
申请日：2018-02-06
Applicant: SHOWA DENKO K.K.
Inventor： Takuya MINAMI , Yoshishige OKUNO , Yuta YAMAGUCHI , Ryuuta MIYASAKA , Naoya FUKUMOTO , Hiroko HATTORI , Hiroyuki TOMITA , Michio SERI , Naoko ITO , Ichiro OTA , Katsumi MUROFUSHI
IPC: C08G65/331 , G11B5/725 , C10M107/38 , C08G65/333
Abstract: A fluorine-containing ether compound of the present invention is represented by the following General Formula (1). (In the General Formula (1), X is a trivalent atom or a trivalent atom group, A is a linking group including at least one polar group, B is a linking group having a perfluoropolyether chain, and D is a polar group or a substituent having a polar group at the end.) [Chem. 1] XA-B-D)3 (1)
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Patent Agency Ranking
公开(公告)号：US20190161885A1
公开(公告)日：2019-05-30
申请号：US16196246
申请日：2018-11-20
Applicant: SHOWA DENKO K.K.
Inventor： Yasunori MOTOYAMA , Yoshishige OKUNO , Yoshikazu UMETA , Keisuke FUKADA
Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view, in which the radiation member has a higher emissivity than that of the susceptor and has an exposed portion as viewed from the heater.
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公开(公告)号：US20230359653A1
公开(公告)日：2023-11-09
申请号：US18245061
申请日：2021-09-07
Applicant: SHOWA DENKO K.K.
Inventor： Yu KAWAHARA , Takuya MINAMI , Yu OKANO , Hiroko TAKASHI , Yoshishige OKUNO
IPC: G06F16/332 , G06F16/338
CPC classification number: G06F16/332 , G06F16/338
Abstract: To improve accuracy in a document search for a document that includes a typographical error. A document retrieval device according to one embodiment of the present invention includes a misidentification table storing a correctly identified character string and a misidentified character string. The document retrieval device includes a document searcher. The document searcher obtains a search character string, and retrieves the search character string from both a document and a character string that is obtained by changing the misidentified character string included in the document to the correctly identified character string.
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公开(公告)号：US20220391759A1
公开(公告)日：2022-12-08
申请号：US17756002
申请日：2020-11-12
Applicant: SHOWA DENKO K.K.
Inventor： Yoshishige OKUNO , Eriko TAKEDA , Junichi SHIBUYA , Yuki NAKAO , Kenji OGAWA
IPC: G06N20/00
Abstract: The present invention is designed to improve the accuracy of machine learning. The present invention provides: a first classification unit configured to classify data into classifiable data and initially-unclassifiable data based on a first learning model; a first annotation unit configured to annotate the classifiable data with a label; a second classification unit configured to classify the initially-unclassifiable data based on a second learning model; a label acquiring unit configured to acquire a label with which the initially-unclassifiable data is to be annotated; a second annotation unit configured to annotate the initially-unclassifiable data with a label; and a second learning model updating unit configured to update the second learning model based on the initially-unclassifiable data that is annotated with the label based on a result of classification by the second classification unit and the label acquired by the label acquiring unit.
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公开(公告)号：US20220261510A1
公开(公告)日：2022-08-18
申请号：US17628292
申请日：2020-07-17
Applicant: SHOWA DENKO K.K.
Inventor： Shimpei TAKEMOTO , Katsuki OKUNO , Takuya MINAMI , Naoto AONUMA , Eriko TAKEDA , Yoshishige OKUNO
Abstract: A material design system includes an expert terminal capable of using a model learning interface for performing machine learning of a model that inputs and outputs a correspondence between a design condition and a material property value of the material to be designed, and a plurality of general-purpose terminals configured to use a material design interface for estimating the material property value based on the design condition or estimating the design condition based on the material property value, by using a learned model that is created by the expert terminal and is for the material to be designed.
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公开(公告)号：US20200181796A1
公开(公告)日：2020-06-11
申请号：US16702749
申请日：2019-12-04
Applicant: SHOWA DENKO K.K.
Inventor： Rimpei KINDAICHI , Yoshishige OKUNO , Tomohiro SHONAI
Abstract: A crystal growing apparatus includes: a crucible including a main body portion and a low radiation portion having a radiation rate lower than that of the main body portion; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the low radiation portion is provided on an outer surface of a first point which is a heating center, in a case where the crucible does not include the low radiation portion.
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