公开(公告)号：US10801128B2

公开(公告)日：2020-10-13

申请号：US16196246

申请日：2018-11-20

Applicant: SHOWA DENKO K.K.

Inventor： Yasunori Motoyama ,  Yoshishige Okuno ,  Yoshikazu Umeta ,  Keisuke Fukada

IPC: C23C16/46 ,  C30B25/10 ,  C30B29/36 ,  C30B25/12

Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view, in which the radiation member has a higher emissivity than that of the susceptor and has an exposed portion as viewed from the heater.