公开(公告)号：US20230055999A1

公开(公告)日：2023-02-23

申请号：US17981138

申请日：2022-11-04

Applicant: SHOWA DENKO K.K.

Inventor： Yoshitaka Nishihara ,  Keisuke Fukada

IPC: H01L29/16 ,  H01L21/02 ,  H01L29/36 ,  C30B25/02 ,  C30B29/36 ,  C30B25/20

Abstract: A method of manufacturing a SiC epitaxial wafer in which a SiC epitaxial layer is formed on a SiC single crystal substrate, the method including identifying a total number of large-pit defects caused by micropipes in the SiC single crystal substrate and large-pit defects caused by substrate carbon inclusions, both of which are contained in the SiC epitaxial layer, using microscopic and photoluminescence images. Also disclosed is a method of manufacturing a SiC epitaxial wafer in which a SiC epitaxial layer is formed on a single crystal substrate, the method including identifying locations of the large-pit defects caused by micropipes in the SiC single crystal substrate and the large-pit defects caused by substrate carbon inclusions in the SiC epitaxial layer, using microscopic and photoluminescence images.

公开(公告)号：US20180374721A1

公开(公告)日：2018-12-27

申请号：US16118734

申请日：2018-08-31

Applicant: NUFLARE TECHNOLOGY, INC. ,  SHOWA DENKO K.K. ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

Inventor： Kunihiko Suzuki ,  Naohisa Ikeya ,  Keisuke Fukada ,  Masahiko Ito ,  Isaho Kamata ,  Hidekazu Tsuchida ,  Hiroaki Fujibayashi ,  Hideyuki Uehigashi ,  Masami Naito ,  Kazukuni Hara ,  Hirofumi Aoki ,  Takahiro Kozawa

IPC: H01L21/67 ,  H01L21/205 ,  C23C16/455

Abstract: A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.

公开(公告)号：US20220149160A1

公开(公告)日：2022-05-12

申请号：US17454416

申请日：2021-11-10

Applicant: SHOWA DENKO K.K.

Inventor： Naoto Ishibashi ,  Keisuke Fukada

IPC: H01L29/36 ,  H01L29/16 ,  H01L21/02

Abstract: A SiC epitaxial wafer of the present invention includes a SiC single crystal substrate, and a high concentration layer that is provided on the SiC single crystal substrate and has an average value of an n-type doping concentration of 1×1018/cm3 or more and 1×1019/cm3 or less, and in-plane uniformity of the doping concentration of 30% or less.

公开(公告)号：US11107892B2

公开(公告)日：2021-08-31

申请号：US16616780

申请日：2018-04-19

Applicant: SHOWA DENKO K.K. ,  Central Research Institute of Electric Power Industry ,  DENSO CORPORATION

Inventor： Keisuke Fukada ,  Naoto Ishibashi ,  Akira Bando ,  Masahiko Ito ,  Isaho Kamata ,  Hidekazu Tsuchida ,  Kazukuni Hara ,  Masami Naito ,  Hideyuki Uehigashi ,  Hiroaki Fujibayashi ,  Hirofumi Aoki ,  Toshikazu Sugiura ,  Katsumi Suzuki

IPC: H01L29/16 ,  C23C16/42 ,  C30B29/36 ,  H01L21/02

Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.

公开(公告)号：US12266693B2

公开(公告)日：2025-04-01

申请号：US17981138

申请日：2022-11-04

Applicant: SHOWA DENKO K.K.

Inventor： Yoshitaka Nishihara ,  Keisuke Fukada

IPC: H01L21/02 ,  C30B25/02 ,  C30B25/20 ,  C30B29/36 ,  H01L29/16 ,  H01L29/36

Abstract: A method of manufacturing a SiC epitaxial wafer in which a SiC epitaxial layer is formed on a SiC single crystal substrate, the method including identifying a total number of large-pit defects caused by micropipes in the SiC single crystal substrate and large-pit defects caused by substrate carbon inclusions, both of which are contained in the SiC epitaxial layer, using microscopic and photoluminescence images. Also disclosed is a method of manufacturing a SiC epitaxial wafer in which a SiC epitaxial layer is formed on a single crystal substrate, the method including identifying locations of the large-pit defects caused by micropipes in the SiC single crystal substrate and the large-pit defects caused by substrate carbon inclusions in the SiC epitaxial layer, using microscopic and photoluminescence images.

公开(公告)号：US12166087B2

公开(公告)日：2024-12-10

申请号：US17454416

申请日：2021-11-10

Applicant: SHOWA DENKO K.K.

Inventor： Naoto Ishibashi ,  Keisuke Fukada

IPC: H01L29/36 ,  C30B25/14 ,  C30B25/16 ,  C30B29/36 ,  H01L21/02 ,  H01L29/16

Abstract: A SiC epitaxial wafer of the present invention includes a SiC single crystal substrate, and a high concentration layer that is provided on the SiC single crystal substrate and has an average value of an n-type doping concentration of 1×1018/cm3 or more and 1×1019/cm3 or less, and in-plane uniformity of the doping concentration of 30% or less.

公开(公告)号：US11424147B2

公开(公告)日：2022-08-23

申请号：US16621899

申请日：2018-05-09

Applicant: SHOWA DENKO K.K.

Inventor： Keisuke Fukada ,  Naoto Ishibashi ,  Hironori Atsumi

IPC: C30B35/00 ,  H01L21/67 ,  C23C16/32 ,  G01J5/00

Abstract: According to an aspect of the present invention, there is provided a deposition apparatus including: a reaction space which is a reaction chamber; a front chamber for deposition; a raw material supply port that is configured to supply a raw material to the reaction space; an opening for measuring a temperature of a wafer mounted on a wafer mounting surface of a mounting stage disposed in the reaction space; and a partition plate that partitions the reaction space and the front chamber for deposition, in which the raw material supply port is positioned on the same plane as the partition plate or on the reaction space side from the partition plate, and the opening is positioned in the front chamber for deposition side from the partition plate.

公开(公告)号：US11427929B2

公开(公告)日：2022-08-30

申请号：US16063391

申请日：2016-12-12

Applicant: SHOWA DENKO K.K.

Inventor： Jia Yu ,  Naoto Ishibashi ,  Keisuke Fukada ,  Tomoya Utashiro ,  Hironori Atsumi

IPC: C30B25/12 ,  C23C16/458 ,  H01L21/677 ,  H01L21/687 ,  H01L21/31 ,  H01L21/205 ,  C23C16/44 ,  H01L21/673 ,  C30B25/10 ,  C30B25/14

Abstract: A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.

公开(公告)号：US20210217648A1

公开(公告)日：2021-07-15

申请号：US17211634

申请日：2021-03-24

Applicant: SHOWA DENKO K.K.

Inventor： Jia Yu ,  Naoto Ishibashi ,  Keisuke Fukada ,  Yoshikazu Umeta ,  Hironori Atsumi

IPC: H01L21/687 ,  H01L21/02 ,  C23C16/458

Abstract: A susceptor which is used in a chemical vapor deposition apparatus for growing an epitaxial layer on a principal plane of a wafer by a chemical vapor deposition method, and which includes a base; and three protrusion parts that are disposed on an outer circumferential part of the base and support an outer circumferential part of the wafer, is provided.

公开(公告)号：US10896831B2

公开(公告)日：2021-01-19

申请号：US16118734

申请日：2018-08-31

Applicant: NUFLARE TECHNOLOGY, INC. ,  SHOWA DENKO K.K. ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

Inventor： Kunihiko Suzuki ,  Naohisa Ikeya ,  Keisuke Fukada ,  Masahiko Ito ,  Isaho Kamata ,  Hidekazu Tsuchida ,  Hiroaki Fujibayashi ,  Hideyuki Uehigashi ,  Masami Naito ,  Kazukuni Hara ,  Hirofumi Aoki ,  Takahiro Kozawa

IPC: C23C16/40 ,  H01L21/67 ,  H01L21/205 ,  C23C16/455 ,  B01F3/02 ,  H01L21/02

Abstract: A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.