公开(公告)号：US20080166840A1

公开(公告)日：2008-07-10

申请号：US11620970

申请日：2007-01-08

申请人： SHYH-FANN TING ,  CHENG-TUNG HUANG ,  LI-SHIAN JENG ,  KUN-HSIEN LEE ,  WEN-HAN HUNG ,  TZYY-MING CHENG

发明人： SHYH-FANN TING ,  CHENG-TUNG HUANG ,  LI-SHIAN JENG ,  KUN-HSIEN LEE ,  WEN-HAN HUNG ,  TZYY-MING CHENG

IPC分类号： H01L21/04

CPC分类号： H01L21/26586 ,  H01L21/26506 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

摘要： The invention is directed to a method for manufacturing a semiconductor. The method comprises steps of providing a substrate having a gate structure formed thereon and forming a source/drain extension region in the substrate adjacent to the gate structure. A spacer is formed on the sidewall of the gate structure and a source/drain region is formed in the substrate adjacent to the spacer but away from the gate structure. A bevel carbon implantation process is performed to implant a plurality carbon atoms into the substrate and a metal silicide layer is formed on the gate structure and the source/drain region.

摘要翻译： 本发明涉及一种制造半导体的方法。 该方法包括以下步骤：提供其上形成有栅极结构的衬底，并在邻近栅极结构的衬底中形成源极/漏极延伸区域。 间隔物形成在栅极结构的侧壁上，并且源极/漏极区域形成在与衬垫相邻的衬底中，但是远离栅极结构。 进行斜面碳注入工艺以将多个碳原子注入到衬底中，并且在栅极结构和源极/漏极区上形成金属硅化物层。