Apparatus for the production of Verneuil crystals
    1.
    发明授权
    Apparatus for the production of Verneuil crystals 失效
    用于生产Verneuil晶体的装置

    公开(公告)号:US3917459A

    公开(公告)日:1975-11-04

    申请号:US46950374

    申请日:1974-05-13

    Applicant: SIEMENS AG

    CPC classification number: C30B11/10 Y10T117/1028

    Abstract: Verneuil crystals are produced by directing two reactive gases, such as O2 and H2 downwardly through separate passageways to combine outside a burner tip and ignite into a downwardly directed flame which impinges against the upper end of a seed crystal. One of the gas passageways is divided into two separate branches, one of which carries a portion of a reactive gas and powdered crystalline material to the burner tip for melting and deposition on a seed crystal.

    Abstract translation: Verneuil晶体是通过将两个反应性气体(例如O2和H2)向下引导通过单独的通道而产生的,以组合在燃烧器尖端外部并点燃到撞击晶种上端的向下指向的火焰。 其中一个气体通道被分成两个独立的分支,其中一个分支将一部分反应性气体和粉末结晶材料携带到燃烧器末端,以熔化和沉积在晶种上。

    Verneuil apparatus for growing spinel-type oxide monocrystals
    2.
    发明授权
    Verneuil apparatus for growing spinel-type oxide monocrystals 失效
    用于生长螺旋型氧化物单晶的VERNEUIL装置

    公开(公告)号:US3876382A

    公开(公告)日:1975-04-08

    申请号:US27166972

    申请日:1972-07-14

    Applicant: SIEMENS AG

    CPC classification number: C30B11/10 Y10T117/1028

    Abstract: The method of producing spinel-type oxide monocrystals wherein the crystal being grown is subjected to a relatively large temperature gradient in its axial direction and a relatively small temperature gradient in its radial direction. The invention includes laterally deflecting hot flame gases immediately below the growth front of the crystal and establishing heat equilibrium around the crystal being grown so that upon cessation of the flame gases, no sudden temperature drop is experienced by the crystal and fracture thereof is avoided. The deflection is achieved by a deflection member composed of a material having thermal characteristics similar to sintered Al.sub.2 O.sub.3.

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